Harvesting electromagnetic energy in the V-band using a rectenna formed by a bow tie integrated with a 6-nm-thick Au/HfO2/Pt metal-insulator-metal diode

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dc.contributor.author Aldrigo, Martino
dc.contributor.author Dragoman, Mircea
dc.contributor.author Modreanu, Mircea
dc.contributor.author Povey, Ian M.
dc.contributor.author Iordanescu, Sergiu
dc.contributor.author Vasilache, Dan
dc.contributor.author Dinescu, Adrian
dc.contributor.author Shanawani, Mazen
dc.contributor.author Masotti, Diego
dc.date.accessioned 2020-03-11T15:56:14Z
dc.date.available 2020-03-11T15:56:14Z
dc.date.issued 2018-05-22
dc.identifier.citation Aldrigo, M., Dragoman, M., Modreanu, M., Povey, I., Iordanescu, S., Vasilache, D., Dinescu, A., Shanawani, M. and Masotti, D. (2018) 'Harvesting Electromagnetic Energy in the V -Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal–Insulator–Metal Diode', IEEE Transactions on Electron Devices, 65(7), pp. 2973-2980. doi: 10.1109/TED.2018.2835138 en
dc.identifier.volume 65 en
dc.identifier.startpage 2973 en
dc.identifier.endpage 2980 en
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/10468/9756
dc.identifier.doi 10.1109/TED.2018.2835138 en
dc.description.abstract In this paper, the first demonstration of a bow-tie antenna integrated with a metal-insulator-metal (MIM) diode for electromagnetic energy harvesting in the V-band (i.e., 40-75 GHz) is presented. We have designed, simulated, fabricated, and fully characterized a 60-GHz rectifying antenna (rectenna) based on a vertical Au-HfO2-PtMIM diode with reduced differential resistance. The dielectric used for the MIM structure is a 6-nm-thick amorphous HfO2 grown by atomic layer deposition. For the fabricated MIM device, we report here a current density of 3 x 10(4) A/cm(2) that exceeds the previous values presented in the literature. The vertical MIM-based rectenna is able to efficiently harvest up to 250 mu V from an impinging modulated millimeter-wave signal with -20 dBm of available power, thus offering a voltage responsivity of over 5 V/W. The reported results indicate that the proposed approach is well suited for future low-power solutions much sought after for the energetically autonomous 5G terminal equipment. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.relation.uri https://ieeexplore.ieee.org/document/8362794
dc.rights © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Diodes en
dc.subject Energy harvesting en
dc.subject Millimeter-wave (mm-wave) devices en
dc.subject Rectennas en
dc.subject Hafnium compounds en
dc.subject Microwave antennas en
dc.subject Electromagnetics en
dc.subject Schottky diodes en
dc.subject Energy harvesting en
dc.title Harvesting electromagnetic energy in the V-band using a rectenna formed by a bow tie integrated with a 6-nm-thick Au/HfO2/Pt metal-insulator-metal diode en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Mircea Gabriel Modreanu, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: mircea.modreanu@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2020-03-11T15:44:01Z
dc.description.version Accepted Version en
dc.internal.rssid 444068437
dc.internal.wokid WOS:000435546700043
dc.contributor.funder Horizon 2020 en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Transactions On Electron Devices en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress mircea.modreanu@tyndall.ie en
dc.internal.IRISemailaddress ian.povey@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENT en

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