A high-speed vertical transition for multi-layer A1N carrier boards designed by time-domain reflectometry

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dc.contributor.author Jezzini, Moises A.
dc.contributor.author Marraccini, Philip J.
dc.contributor.author Peters, Frank H.
dc.date.accessioned 2020-04-27T15:10:10Z
dc.date.available 2020-04-27T15:10:10Z
dc.date.issued 2019-06
dc.identifier.citation Jezzini, M. A., Marraccini, P. J. and Peters, F. H. (2019) 'A High-speed Vertical Transition for Multi-layer A1N Carrier Boards Designed by Time-domain Reflectometry', Progress in Electromagnetics Research Symposium (PIERS) Rome, Italy, 17-20 June. doi: 10.1109/PIERS-Spring46901.2019.9017234 en
dc.identifier.startpage 637 en
dc.identifier.endpage 646 en
dc.identifier.isbn 978-1-7281-3403-1
dc.identifier.issn 1559-9450
dc.identifier.uri http://hdl.handle.net/10468/9873
dc.identifier.doi 10.1109/PIERS-Spring46901.2019.9017234 en
dc.description.abstract High density, high speed photonic integrated circuits (PICs) have large numbers of closely spaced DC and RF contacts, which must be connected in the package. The use of multilayer carrier boards to interface between the contacts and the package gives high performance and high density. In order to be effective as a packaging solution, these multi-layer carrier boards need high-speed electrical channels with good performance. Also, the boards usually need high thermal conductivity to manage the heat. Co-fired aluminium nitride (A1N) has the needed high thermal conductivity. However, there are no designs of multi-layer high-speed channels in the literature for co-fired A1N. Therefore, this article presents a high-speed multi-layer channel for co-fired A1N and its measured results. Two transmission lines were designed that showed a measured loss of Ë 0.09dBmm-1 at 40GHz. The vertical transition allows for arbitrary planar rotations of the channel and showed a measured 3 dB bandwidth of 33 GHz and small penalties in the eye diagram with a 44 Gbits-1 signal. The channels showed crosstalk below -30 dB. en
dc.description.sponsorship Science Foundation Ireland (SFI10/CE/I1853 (CTVR II) and SFI12/RC/2276 (IPIC)); European Commission ( European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement numbers 780283-MORPHIC and 700930-PICTURE)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.relation.uri https://ieeexplore.ieee.org/document/9017234
dc.rights © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Aluminum nitride en
dc.subject III-V semiconductor materials en
dc.subject Springs en
dc.subject Time-domain analysis en
dc.subject Standards en
dc.subject Photonics en
dc.title A high-speed vertical transition for multi-layer A1N carrier boards designed by time-domain reflectometry en
dc.type Conference item en
dc.internal.authorcontactother Moises Jezzini, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: moises.jezzini@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2020-04-27T14:59:00Z
dc.description.version Accepted Version en
dc.internal.rssid 512066572
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder European Research Council en
dc.contributor.funder Horizon 2020 en
dc.description.status Peer reviewed en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Rome, Italy en
dc.internal.IRISemailaddress moises.jezzini@tyndall.ie en
dc.internal.IRISemailaddress f.peters@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/780283/EU/Mems-based zerO-power Reconfigurable PHotonic ICs/MORPHIC en

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