Functionalization of germanium nanowires
Collins, Gillian; Fleming, Peter; O'Dwyer, Colm; Morris, Michael A.; Holmes, Justin D.
Date:
2011-01
Copyright:
© The Electrochemical Society, Inc. 2011. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Collins, G., Fleming, P., O'Dwyer, C., Morris, M. A., Holmes, J. D. (2011) 'Functionalization of Germanium Nanowires'. ECS Transactions, 35(8), pp. 89-99; doi:10.1149/1.3567740
Citation:
Collins, G., Fleming, P., O'Dwyer, C., Morris, M. A., and Holmes, J. D. (2011) 'Functionalization of Germanium Nanowires', ECS Transactions, 35(8), pp. 89-99; doi:10.1149/1.3567740
Abstract:
Halogen-termination and organic functionalization of germanium
(Ge) nanowires is described. X-ray photoelectron spectroscopy
(XPS), X-ray photoemission electron spectroscopy (XPEEM),
infrared spectroscopy (IR) and transmission electron spectroscopy
(TEM) were used to characterize the modified nanowire surfaces.
The stability of alkyl and alkanethiol monolayers formed on Cl, Br
and I-terminated surfaces are compared. The direct covalent
attachment of aryl ligands onto H-Ge nanowires can be achieved
by the decomposition of arenediazonium salts in acetonitrile
solutions. The influence of the ring substituent on the thickness
and uniformity of the functionalization layer was investigated.
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