Atomic layer deposition of metals: Precursors and film growth

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dc.contributor.authorHagen, D. J.
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorKarppinen, M.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2019-12-02T12:53:19Z
dc.date.available2019-12-02T12:53:19Z
dc.date.issued2019-11-05
dc.date.updated2019-12-02T12:43:24Z
dc.description.abstractThe coating of complex three-dimensional structures with ultrathin metal films is of great interest for current technical applications, particularly in microelectronics, as well as for basic research on, for example, photonics or spintronics. While atomic layer deposition (ALD) has become a well-established fabrication method for thin oxide films on such geometries, attempts to develop ALD processes for elemental metal films have met with only mixed success. This can be understood by the lack of suitable precursors for many metals, the difficulty in reducing the metal cations to the metallic state, and the nature of metals as such, in particular their tendency to agglomerate to isolated islands. In this review, we will discuss these three challenges in detail for the example of Cu, for which ALD has been studied extensively due to its importance for microelectronic fabrication processes. Moreover, we give a comprehensive overview over metal ALD, ranging from a short summary of the early research on the ALD of the platinoid metals, which has meanwhile become an established technology, to very recent developments that target the ALD of electropositive metals. Finally, we discuss the most important applications of metal ALD.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid041309en
dc.identifier.citationHagen, D. J., Pemble, M. E. and Karppinen, M. (2019) 'Atomic layer deposition of metals: Precursors and film growth', Applied Physics Reviews, 6(4), 041309. doi: 10.1063/1.5087759en
dc.identifier.doi10.1063/1.5087759en
dc.identifier.eissn1931-9401
dc.identifier.issued4en
dc.identifier.journaltitleApplied Physics Reviewsen
dc.identifier.urihttps://hdl.handle.net/10468/9285
dc.identifier.volume6en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/11/PI/1117/IE/New Materials and Devices for Optical Applications via the use of Hybrid Technologies: Colloidal Crystallisation and Advanced Thin Film Deposition/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3015/IE/Design, Deposition and Exploitation of Novel Micro and Nano-scale Materials and Devices for Advanced Manufacturing- DEPO-Man/en
dc.relation.urihttps://aip.scitation.org/doi/abs/10.1063/1.5087759
dc.rights© 2019, the Authors. Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as Hagen, D. J., Pemble, M. E. and Karppinen, M. (2019) 'Atomic layer deposition of metals: Precursors and film growth', Applied Physics Reviews, 6(4), 041309. doi: 10.1063/1.5087759, and may be found at https://doi.org/10.1063/1.5087759en
dc.subjectAtomic layer depositionen
dc.subjectALDen
dc.subjectElemental metal filmen
dc.subjectCuen
dc.titleAtomic layer deposition of metals: Precursors and film growthen
dc.typeArticle (peer-reviewed)en
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