Pulse quenching and charge-sharing effects on heavy-ion microbeam induced ASET in a full-custom CMOS OpAmp

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dc.contributor.authorFontana, Andrésen
dc.contributor.authorPazos, Sebastianen
dc.contributor.authorAguirre, Fernandoen
dc.contributor.authorVega, Nahuelen
dc.contributor.authorMuller, Nahuelen
dc.contributor.authorDe La Fourniere, Emmanuelen
dc.contributor.authorSilveira, Fernandoen
dc.contributor.authorDebray, Mario E.en
dc.contributor.authorPalumbo, Felixen
dc.date.accessioned2025-10-14T15:21:50Z
dc.date.available2025-10-14T15:21:50Z
dc.date.issued2019-03-28en
dc.description.abstractIn this paper, charge-sharing effects on analog single-event transients are experimentally observed in a fully custom designed, 180-nm complementary metal-oxide-semiconductor (CMOS) operational amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single-node collection for the closed-loop characteristics of the circuit under test. The layout of these transistors is consistent with charge-sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout. A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationFontana, A., Pazos, S., Aguirre, F., Vega, N., Müller, N., De la Fourniere, E., Silveira, F., Debray, M. E. and Palumbo, F. (2019) 'Pulse quenching and charge-sharing effects on heavy-ion microbeam induced ASET in a full-custom CMOS OpAmp', IEEE Transactions on Nuclear Science, 66(7), pp.1473-1482. https://doi.org/10.1109/TNS.2019.2908174en
dc.identifier.doi10.1109/tns.2019.2908174en
dc.identifier.endpage1482en
dc.identifier.issn0018-9499en
dc.identifier.issn1558-1578en
dc.identifier.issued7en
dc.identifier.journaltitleIEEE Transactions on Nuclear Scienceen
dc.identifier.startpage1473en
dc.identifier.urihttps://hdl.handle.net/10468/18037
dc.identifier.volume66en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartofIEEE Transactions on Nuclear Scienceen
dc.rights© 2019, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAnalog single-event transients (ASET)en
dc.subjectCharge sharingen
dc.subjectHeavy ionen
dc.subjectMicrobeamen
dc.subjectPulse quenchingen
dc.subjectRadiationen
dc.titlePulse quenching and charge-sharing effects on heavy-ion microbeam induced ASET in a full-custom CMOS OpAmpen
dc.typeArticle (peer-reviewed)en
dc.typejournal-articleen
oaire.citation.issue7en
oaire.citation.volume66en
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