InAlN-based LEDs emitting in the near-UV region

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dc.contributor.authorPampili, Pietro
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorMaaskant, Pleun
dc.contributor.authorAkhter, Mahbub
dc.contributor.authorCorbett, Brian
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Higher Education Authorityen
dc.date.accessioned2019-11-20T05:26:02Z
dc.date.available2019-11-20T05:26:02Z
dc.date.issued2019-05-23
dc.description.abstractFully functional InAlN-based ultraviolet LEDs emitting at 340–350 nm were demonstrated for the first time; detailed electrical and optical characterization is presented and discussed. Results from the measurements at pulsed conditions are in agreement with the attribution of the dominant electroluminescence peak to near-band-edge emission. The composition of the AlGaN barriers was chosen to give the same internal polarization field as that of the InAlN wells. A simulation study of this polarization-matched heterostructure shows a significant increase in the electron-hole overlap integral if compared with a standard AlGaN/AlGaN active region having the same level of carrier confinement. Limitations and problems of these preliminary devices are also presented, and possible future work aimed at increasing their efficiency is discussed.en
dc.description.sponsorshipTYFFANI project; INSPIRE project;en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleidSCCB33en
dc.identifier.citationPampili, P., Zubialevich, V.Z., Maaskant, P., Akhter, M., Corbett, B. and Parbrook, P.J., 2019. InAlN-based LEDs emitting in the near-UV region. Japanese Journal of Applied Physics, 58(SC), (SCCB33). DOI:10.7567/1347-4065/ab106ben
dc.identifier.doi10.7567/1347-4065/ab106ben
dc.identifier.eissn1347-4065
dc.identifier.endpage10en
dc.identifier.issn0021-4922
dc.identifier.issuedSCen
dc.identifier.journaltitleJapanese Journal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9125
dc.identifier.volume58en
dc.language.isoenen
dc.publisherIOP Scienceen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/EN/E001A/IE/Peter Parbrook/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I2993/IE/Advanced Ultraviolet Emitters from InAlN Based Alloy Structures/en
dc.relation.urihttps://iopscience.iop.org/article/10.7567/1347-4065/ab106b
dc.rights© 2019 The Japan Society of Applied Physicsen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectInAlN-based ultraviolet LEDsen
dc.subjectOptical characterizationen
dc.subjectNear-UV regionen
dc.titleInAlN-based LEDs emitting in the near-UV regionen
dc.typeArticle (peer-reviewed)en
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