Heterogeneous integration of 20x10 µm blue micro-LEDs/pixels on GaN HEMTs for visible light communication

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dc.contributor.authorMuhammet, Gencen
dc.contributor.authorRahman, Sheikh Ifaturen
dc.contributor.authorLi, Zhien
dc.contributor.authorRoycroft, Brendanen
dc.contributor.authorArafata, Yeasiren
dc.contributor.authorParbrook, Peter J.en
dc.contributor.authorRingel, Steven A.en
dc.contributor.authorMaxwell, Graemeen
dc.contributor.authorCorbett, Brian M.en
dc.contributor.authorRajan, Siddharthen
dc.contributor.funderTyndall National Instituteen
dc.contributor.funderOhio State Universityen
dc.date.accessioned2025-04-08T10:15:12Z
dc.date.available2025-04-08T10:15:12Z
dc.date.issued2025-03-19en
dc.description.abstractThe development of next-generation communication networks aims to provide faster and more reliable solutions in a small form factor. Visible light communication (VLC) has emerged as a promising complementary technology to traditional radio frequency wireless communication due to its exceptional efficiency, high modulation speeds, and freedom from the congested radio spectrum. Recent advancements have focused on gallium nitride (GaN)-based micro-light-emitting diodes (microLEDs) for VLC. However, these microLEDs typically require high injection current densities and high-frequency operation, necessitating the use of independent drivers and resulting in bulky systems. This study presents an innovative approach to overcome these limitations by heterogeneously integrating of 20x10 µm2 blue microLEDs using transfer printing onto a GaN-based high electron mobility transistor (HEMT) target wafer grown on silicon carbide (SiC) substrate. This integration allows for a compact, single-chip platform where the emission from a single microLED is modulated by tuning the gate voltage of its GaN HEMT. The resulting on-chip system achieves with a modulation bandwidth of 100 MHz, maintaining a small form factor. Our findings suggest that this approach holds significant promise for the development of future large-scale VLC systems on a single chip, offering broad application prospects.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGenc, M., Rahman, S.I., Li, Z., Roycroft, B.J., Arafat, Y., Parbrook, P.J., Ringel, S.A., Maxwell, G., Corbett, B. and Rajan, S. (2025) ‘Heterogeneous integration of 20x10 µm blue micro-LEDs/pixels on GaN HEMTs for visible light communication’, Proceedings of SPIE, 13366, Gallium Nitride Materials and Devices XX. San Francisco, United States, 25-31 January 2025. https://doi.org/10.1117/12.3044048en
dc.identifier.doi10.1117/12.3044048en
dc.identifier.urihttps://hdl.handle.net/10468/17248
dc.identifier.volume13366en
dc.language.isoenen
dc.publisherSociety of Photo-Optical Instrumentation Engineers (SPIE)en
dc.relation.urihttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/13366.tocen
dc.rights© 2025, Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.subjectTransfer printingen
dc.subjectMicroLEDsen
dc.subjectGaN HEMTsen
dc.subjectHeterogeneous integrationen
dc.subjectOn-chip photonicsen
dc.subjectVisible light communicationen
dc.titleHeterogeneous integration of 20x10 µm blue micro-LEDs/pixels on GaN HEMTs for visible light communicationen
dc.typeConference itemen
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