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  • Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures 
    Muñoz-Gorriz, J.; Monaghan, Scott; Cherkaoui, Karim; Suñé, J.; Hurley, Paul K.; Miranda, E. (AIP Publishing, 2017-12-05)
    The angular wavelet analysis is applied for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt capacitors with areas ranging from 104 to 105 μm2. The breakdown spot lateral sizes are in the range from 1 ...
  • The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications 
    Toomey, B.; Cherkaoui, Karim; Monaghan, Scott; Djara, Vladimir; O'Connor, Éamon; O'Connell, D.; Oberbeck, L.; Tois, E.; Blomberg, T.; Newcomb, S. B.; Hurley, Paul K. (Elsevier B.V., 2012-01-12)
    Hafnium erbium oxide (HfErOx) thin films were formed using atomic layer deposition. The effect of using different Hf:Er pulse ratios on the electrical and structural properties of the HfErOx thin films (∼9 nm) in ...
  • Multi-technique characterisation of MOVPE-grown GaAs on Si 
    Wong, Chiu Soon; Bennett, Nick S.; McNally, Patrick J.; Galiana, B.; Tejedor, P.; Benedicto, M.; Molina-Aldareguia, J. M.; Monaghan, Scott; Hurley, Paul K.; Cherkaoui, Karim (Elsevier B.V., 2010-10-08)
    The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high-speed and low-power logic applications. That said this integration generates immense scientific and ...
  • Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs 
    Bennett, N.S.; Cherkaoui, Karim; Wong, C. S.; O'Connor, Éamon; Monaghan, Scott; Hurley, Paul K.; Chauhan, L.; McNally, P. J. (Elsevier B.V., 2014-08-29)
    The effects of post-annealing conditions on solid-phase crystallization of atomic-layer-deposited HfO2 films grown on GaAs were investigated. Film properties, including crystallinity (preferential crystal orientation and ...
  • Electrically active interface defects in the In0.53Ga0.47As MOS system 
    Djara, Vladimir; O'Regan, T. P.; Cherkaoui, Karim; Schmidt, Michael; Monaghan, Scott; O'Connor, Éamon; Povey, Ian M.; O'Connell, D.; Pemble, Martyn E.; Hurley, Paul K. (Elsevier B.V., 2013-03-27)
    In this work we present experimental results examining the energy distribution of the relatively high (>1 × 1012 cm−2 eV−1) density of electrically active defects which are commonly reported at the interface between high ...
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