Impact of metal hybridization on contact resistance and leakage current of carbon nanotube transistors

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dc.contributor.authorSu, Sheng-Kai
dc.contributor.authorSanchez-Soares, Alfonso
dc.contributor.authorChen, Edward
dc.contributor.authorKelly, Thomas
dc.contributor.authorFagas, Giorgos
dc.contributor.authorGreer, James C.
dc.contributor.authorPitner, Gregory
dc.contributor.authorWong, H.-S. Philip
dc.contributor.authorRadu, Iuliana P.
dc.contributor.funderTaiwan Semiconductor Manufacturing Companyen
dc.date.accessioned2022-06-30T15:09:14Z
dc.date.available2022-06-30T15:09:14Z
dc.date.issued2022-06-24
dc.date.updated2022-06-30T09:12:05Z
dc.description.abstractCarbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage currents could limit scaling of CNFETs. Non-equilibrium Greenâ s function (NEGF) simulation investigates that coupling between contact metal and CNT impacts both contact resistance and leakage current. The physical mechanisms underlying the effects are analyzed. A model with calibrated metal coupling strength from experimental data projects ION-IOFF design space to understand the trade-off between shrinking contact and extension lengths. For CNT with diameter of 1 nm, both contact and extension lengths greater than 8 nm are a good compromise between ION and IOFF for digital logic in advanced technology nodes.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSu, S.-K., Sanchez-Soares, A., Chen, E., Kelly, T., Fagas, G., Greer, J. C., Pitner, G., Wong, H.-S. P. and Radu, I. P. (2022) 'Impact of metal hybridization on contact resistance and leakage current of carbon nanotube transistors', IEEE Electron Device Letters. doi: 10.1109/LED.2022.3185991en
dc.identifier.doi10.1109/LED.2022.3185991en
dc.identifier.eissn1558-0563
dc.identifier.issn0741-3106
dc.identifier.journaltitleIEEE Electron Device Lettersen
dc.identifier.urihttps://hdl.handle.net/10468/13336
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2022, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectCarbon nanotube (CNT)en
dc.subjectCMOS scalingen
dc.subjectContact resistance,en
dc.subjectLeakage currenten
dc.subjectMetal hybridizationen
dc.titleImpact of metal hybridization on contact resistance and leakage current of carbon nanotube transistorsen
dc.typeArticle (peer-reviewed)en
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