Low-frequency noise in junctionless multigate transistors

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dc.contributor.authorJang, Doyoung
dc.contributor.authorLee, Jae Woo
dc.contributor.authorLee, Chi-Woo
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.authorMontes, Laurent
dc.contributor.authorLee, Jung Il
dc.contributor.authorKim, Gyu Tae
dc.contributor.authorGhibaudo, G.
dc.contributor.funderNational Research Foundation of Korea
dc.contributor.funderFondation Nanosciences
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programme
dc.contributor.funderKorea Institute of Science and Technology
dc.contributor.funderCentre National pour la Recherche Scientifique et Technique
dc.date.accessioned2017-07-28T11:04:40Z
dc.date.available2017-07-28T11:04:40Z
dc.date.issued2011
dc.description.abstractLow-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30 x 10(16) cm(-3) eV(-1), which is similar to Si-SiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers. (C) 2011 American Institute of Physics. (doi:10.1063/1.3569724)en
dc.description.sponsorshipNational Research Foundation of Korea (NRF grant Converging Research Center program, Grant No. 2010K000981, WCU Grant No. R32-2008-000-10082-0, GRL Grant No. M6060500007-06A0500-00710, 2005-2002369); Korea Institute of Science and Technology and Centre National pour la Recherche Scientifique et Technique (CNRS KIST LIA collaboration); Science Foundation Ireland (Grant No. 05/IN/I888)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid133502
dc.identifier.citationJang, D., Lee, J. W., Lee, C.-W., Colinge, J.-P., Montès, L., Lee, J. I., Kim, G. T. and Ghibaudo, G. (2011) 'Low-frequency noise in junctionless multigate transistors', Applied Physics Letters, 98(13), pp. 133502. doi: 10.1063/1.3569724en
dc.identifier.doi10.1063/1.3569724
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued13
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4324
dc.identifier.volume98
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3569724
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jang, D., Lee, J. W., Lee, C.-W., Colinge, J.-P., Montès, L., Lee, J. I., Kim, G. T. and Ghibaudo, G. (2011) 'Low-frequency noise in junctionless multigate transistors', Applied Physics Letters, 98(13), pp. 133502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3569724en
dc.subjectField-effect transistorsen
dc.subjectExcess noiseen
dc.subjectMos-transistorsen
dc.subject1/f noiseen
dc.subjectDevicesen
dc.subjectModelen
dc.subjectCarrier mobilityen
dc.subjectMOSFETsen
dc.subjectNanowires1/f noiseen
dc.subjectOxide surfacesen
dc.titleLow-frequency noise in junctionless multigate transistorsen
dc.typeArticle (peer-reviewed)en
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