Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector

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Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector

Dragoman, Mircea; Aldrigo, Martino; Dragoman, Daniela; Povey, Ian M.; Iordanescu, Sergiu; Dinescu, Adrian; Di Donato, Andrea; Modreanu, Mircea
Date: 2020-09-23
Copyright: © 2020, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.
Copyright information: https://creativecommons.org/licenses/by-nc-nd/4.0/
Full text restriction information: Access to this article is restricted until 24 months after publication by request of the publisher.
Restriction lift date: 2022-09-23
Citation: Dragoman, M., Aldrigo, M., Dragoman, D., Povey, I. M., Iordanescu, S., Dinescu, A., Di Donato, A. and Modreanu, M. (2020) 'Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector', Physica E: Low-dimensional Systems and Nanostructures. doi: 10.1016/j.physe.2020.114451
Published Version: 10.1016/j.physe.2020.114451

Abstract:

Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3-10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.

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© 2020, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license. Except where otherwise noted, this item's license is described as © 2020, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.
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