Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector

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Dragoman, Mircea
Aldrigo, Martino
Dragoman, Daniela
Povey, Ian M.
Iordanescu, Sergiu
Dinescu, Adrian
Di Donato, Andrea
Modreanu, Mircea
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Elsevier B.V.
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Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3-10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.
MoS2 growth at wafer scale , Photodetection , Piezoelectricity , 2D materials , Ferroelectricity
Dragoman, M., Aldrigo, M., Dragoman, D., Povey, I. M., Iordanescu, S., Dinescu, A., Di Donato, A. and Modreanu, M. (2020) 'Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector', Physica E: Low-dimensional Systems and Nanostructures. doi: 10.1016/j.physe.2020.114451