Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector
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Accepted Version
Date
2020-09-23
Authors
Dragoman, Mircea
Aldrigo, Martino
Dragoman, Daniela
Povey, Ian M.
Iordanescu, Sergiu
Dinescu, Adrian
Di Donato, Andrea
Modreanu, Mircea
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier B.V.
Published Version
Abstract
Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3-10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.
Description
Keywords
MoS2 growth at wafer scale , Photodetection , Piezoelectricity , 2D materials , Ferroelectricity
Citation
Dragoman, M., Aldrigo, M., Dragoman, D., Povey, I. M., Iordanescu, S., Dinescu, A., Di Donato, A. and Modreanu, M. (2020) 'Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector', Physica E: Low-dimensional Systems and Nanostructures. doi: 10.1016/j.physe.2020.114451