Planar semiconductor membranes with brightness enhanced embedded quantum dots via electron beam induced deposition of 3D nanostructures: Implications for solid state lighting
Varo, Simone; Li, Xin; Juska, Gediminas; Ranjbar Jahromi, Iman; Gocalinska, Agnieszka M.; Di Falco, Andrea; Pelucchi, Emanuele
Date:
2020-12-11
Copyright:
© 2020, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, after technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsanm.0c02969
Full text restriction information:
Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date:
2021-12-11
Citation:
Varo, S., Li, X., Juska, G., Ranjbar Jahromi, I., Gocalinska, A. M., Di Falco, A. and Pelucchi, E. (2020) 'Planar semiconductor membranes with brightness enhanced embedded quantum dots via electron beam induced deposition of 3D nanostructures: Implications for solid state lighting', ACS Applied Nano Materials, 3(12), pp. 12401-12407. doi: 10.1021/acsanm.0c02969
Abstract:
The engineering of the surrounding photonic environment is one of the most successful approaches routinely used to increase light extraction efficiency and tune the properties of solid state sources of quantum light. However, results achieved so far have been hampered by the lack of a technology that allows for the straightforward fabrication of large-scale 3D nano- and micro- features, with very high resolution and sufficient flexibility in terms of available materials. In this paper we show that electron beam induced deposition can be a very promising approach to solve this issue, as exemplified by the fabrication of Pt and SiO2 nanofeatures on a membrane containing ordered arrays of site-controlled pyramidal quantum dots. Micro-photoluminescence has been used to compare the emission of the dots before and after the deposition of the structures, remarkably showing both a significant increase in the light extraction efficiency and no degradation of the spectral quality, implying that negligible damage has been caused to the emitter due to the deposition process. This paves the way for novel post-growth processing strategies for epitaxial quantum dots used in both quantum information technologies and lighting applications.
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