Correlation of lithographic performance of the electron beam resists SML and ZEP with their chemical structure

Show simple item record Gangnaik, Anushka S. Georgiev, Yordan M. Holmes, Justin D. 2016-01-28T12:19:40Z 2016-01-28T12:19:40Z 2015-07-08
dc.identifier.citation GANGNAIK, A., GEORGIEV, Y. M. & HOLMES, J. D. 2015. Correlation of lithographic performance of the electron beam resists SML and ZEP with their chemical structure. Journal of Vacuum Science & Technology B, 33:4, 041601, 1-7. en
dc.identifier.volume 33 en
dc.identifier.issued 4 en
dc.identifier.startpage 041601(1) en
dc.identifier.endpage 041601(7) en
dc.identifier.issn 1071-1023
dc.identifier.doi 10.1116/1.4926387
dc.description.abstract Study of topographical and structural changes occurring in a positive resist known as SML after electron beam lithography are presented in this article. The authors also defined its chemical structure, which is very important for understanding the lithographic performance of the resist. The structural and lithographic properties of SML have been compared to the traditional ZEP resist. First, the change in the surface roughness with respect to the electron dose of SML and ZEP resists was measured. It was found that both resists start off with similar initial roughness values. However, ZEP was observed to have a higher roughness at the apex electron dose, thereafter a reduction in roughness was observed. The roughness variation in the two resists reflected on the resolution of the gratings that were patterned in both the resists. Gratings in SML showed smoother line edge roughness, and the patterns transferred using SML resist showed more even features than the ones transferred with ZEP. Subsequently, to understand the chemical composition of the new resist, Fourier transform infrared spectroscopy (FTIR) measurements were performed on both the resists as well as on poly(methyl methacrylate) (PMMA) and their spectra were compared. The FTIR spectra revealed that SML had a chemical structure similar to ZEP and PMMA polymers. The high sensitivity of ZEP is attributed to the Cl group in the compound, which is not present in SML and PMMA and can therefore explain their lower sensitivity to electron exposure in comparison to ZEP. Unlike PMMA but comparable to ZEP, SML shows an IR peak at a wavenumber close to 850 cm−1, suggesting the presence of α-methylstyrene group within its chemical structure, which accounts for the resist's high etch durability, similar to ZEP. Additional FTIR measurements of pre- and postexposed resists together with their attributions to the resolution of the SML and ZEP resists is also demonstrated in this article. The data presented in the study highlights the chemical properties of SML and ZEP resists polymers and correlates them to their lithographic performance. en
dc.description.sponsorship Science Foundation Ireland (SFI Novel Nanowire Structures for Devices project (Grant Agreement No. 09-IN1-I2602)). en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2015, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Journal of Vacuum Science & Technology B, Vol 33:4, 041601 (2015) and may be found at en
dc.rights.uri en
dc.subject Polymer structure en
dc.subject Durability en
dc.subject Surface roughness en
dc.subject Chemical structure en
dc.subject Diffraction gratings en
dc.subject Polymers en
dc.subject Spectrochemical analysis en
dc.subject Etching en
dc.subject Electron resists en
dc.subject Polymer phase-separation en
dc.subject Hydrogen silsesquioxane en
dc.subject Edge roughness en
dc.subject Fabrication en
dc.subject Features en
dc.subject PMMA en
dc.title Correlation of lithographic performance of the electron beam resists SML and ZEP with their chemical structure en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2015-07-10T09:16:09Z
dc.description.version Published Version en
dc.internal.rssid 309067264
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Vacuum Science & Technology B en
dc.internal.copyrightchecked No. !!CORA!! AIP Guidelines for Institutional Repositories: "AIP authors only may post their articles (including the AIP version) on their own or their employers’ web sites. This includes the right to include the final publisher’s version of the article in the author’s institutional repository. " Accessed January 2016: SHERPA/RoMEO indicates "author can archive publisher's version/PDF" under certain condtions including Institutional repository. en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en

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