• Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures 

  Muñoz-Gorriz, J.; Monaghan, Scott; Cherkaoui, K.; Suñé, J.; Hurley, Paul K.; Miranda, E. (AIP Publishing, 2017-12-05)

  The angular wavelet analysis is applied for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt capacitors with areas ranging from 104 to 105 μm2. The breakdown spot lateral sizes are in the range from 1 ...
• Butterfly packaged low-linewidth optical comb source 

  Alexander, Justin K.; Morrissey, Padraic E.; Yang, Hua; Yang, M.; Zhao, Y.; Rensing, Marc; O'Brien, Peter; Peters, Frank H. (Institution of Engineering and Technology, 2017-05-01)

  A packaged optical comb source is demonstrated. A low-linewidth optical comb source is designed and fabricated. The device is packaged in a seven-pin high-speed butterfly package with an subminiature version A (SMA) connector ...
• Classification of processes for the atomic layer deposition of metals based on mechanistic information from density functional theory calculations 

  Elliott, Simon D.; Dey, G.; Maimaiti, Yasheng (AIP Publishing, 2017-02-03)

  Reaction cycles for the atomic layer deposition (ALD) of metals are presented, based on the incomplete data that exist about their chemical mechanisms, particularly from density functional theory (DFT) calculations. ALD ...
• Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters 

  Patra, Saroj Kanta; Schulz, Stefan (AIP Publishing, 2017-09-05)

  In this work, we present a detailed analysis of the second-order piezoelectric effect in c-plane InxGa1xN/GaN quantum dots and its consequences for electronic and optical properties of these systems. Special attention is ...
• First principles modeling of defects in the Al2O3/In0.53Ga0.47As system 

  Greene-Diniz, Gabriel; Kuhn, Kelin J.; Hurley, Paul K.; Greer, James C. (AIP Publishing, 2017-02-15)

  Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point defects in bulk In0.53Ga0.47As and for models ...

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