• Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis 

  Sheerin, Thomas P.; Tanner, Daniel S. P.; Schulz, Stefan (American Physical Society, 2021-04-19)

  In this paper we investigate strain and local polarization field effects in zinc-blende indium gallium nitride (InGaN) alloys and quantum wells. To do so we parametrize and establish a Stillinger-Weber potential with ...
• Overcoming Pd–TiO2 deactivation during H2 production from photoreforming using Cu@Pd nanoparticles supported on TiO2 

  Platero, F.; López-Martín, A.; Caballero, A.; Rojas, T. C.; Nolan, Michael; Colón, G. (ACS Publications, 2021-03-01)

  Different Cu@Pd-TiO2 systems have been prepared by a two-step synthesis to obtain a bimetallic co-catalyst for the H2 photoreforming reaction. We find that the tailored deposition of Pd covering the Cu nanoclusters by a ...
• Transparent all-oxide hybrid NiON/TiO2 heterostructure for optoelectronic applications 

  Aivalioti, Chrysa; Papadakis, Alexandros; Manidakis, Emmanouil; Kayambaki, Maria; Androulidaki, Maria; Tsagaraki, Katerina; Pelekanos, Nikolaos T.; Stoumpos, Constantinos; Modreanu, Mircea; Crăciun, Gabriel; Romanitan, Cosmin; Aperathitis, Elias (MDPI, 2021-04-21)

  Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this ...
• In silico design of a thermal atomic layer etch process of cobalt 

  Kondati Natarajan, Suresh; Nolan, Michael; Theofanis, Patrick; Mokhtarzadeh, Charles; Clendenning, Scott B. (American Institute of Physics, 2021-03-03)

  Thermal atomic layer etch (ALE), facilitating the removal of up to one monolayer of material per cycle, is growing in importance for thin-film processing. The number of available ALE processes is much smaller than for ...
• GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes 

  Dinh, Duc V.; Quan, Zhiheng; Roycroft, Brendan; Parbrook, Peter J.; Corbett, Brian (Optical Society of America, 2016-12-12)

  We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (112¯2) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high-quality (112¯2) GaN templates, which were ...

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