• Electrochemically modified boron-doped diamond electrode with Pd and Pd-Sn nanoparticles for ethanol electrooxidation 

  Mavrokefalos, Christos K.; Hasan, Maksudul; Khunsin, Worawut; Schmidt, Michael; Maier, Stefan A.; Rohan, James F.; Compton, Richard G.; Foord, John S. (Elsevier, 2017-05-08)

  The modification of hydrogen terminated boron-doped diamond (HBDD) electrode with pure palladium (Pd) and Pd-Sn (tin) nanoparticles is described in this study. For synthesis of Sn/HBDD and Pd-Sn/HBDD electrode, a potentiostatic ...
• Rapid, low temperature synthesis of germanium nanowires from oligosilylgermane precursors 

  Meshgi, Mohammad A.; Biswas, Subhajit; McNulty, David; O'Dwyer, Colm; Verni, Giuseppe A.; O'Connell, John; Davitt, Fionán; Letofsky-Papst, Ilse; Poelt, Peter; Holmes, Justin D.; Marschner, Christoph (American Chemical Society, 2017-05-08)

  New oligosilylgermane compounds with weak Ge–H bonds have been used as precursors for the rapid synthesis of germanium (Ge) nanowires in high yields (>80%), via a solution–liquid–solid (SLS) mechanism, using indium (In) ...
• Gate-controlled heat generation in ZnO nanowire FETs 

  Pescaglini, Andrea; Biswas, Subhajit; Cammi, Davide; Ronning, Carsten; Holmes, Justin D.; Iacopino, Daniela (Royal Society of Chemistry, 2017-05-02)

  Nanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent heating and sensing. However, all ...
• Si(100)-SiO2 interface properties following rapid thermal processing 

  O'Sullivan, B. J.; Hurley, Paul K.; Leveugle, C.; Das, J. H. (AIP Publishing, 2001-04)

  An experimental examination of the properties of the Si(100)-SiO2 interface measured following rapid thermal processing (RTP) is presented. The interface properties have been examined using high frequency and quasi-static ...
• Properties of rf-sputtered indium-tin-oxynitride thin films 

  Aperathitis, E.; Bender, M.; Cimalla, V.; Ecke, G.; Modreanu, Mircea (AIP Publishing, 2003-07)

  Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) thin films have been fabricated by rf-sputtering in plasma containing Ar or a mixture of Ar and N-2, respectively. The structural, electrical and optical properties ...

View more