Tyndall National Institute - Journal Articles

Tyndall National Institute - Journal Articles

 

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  • O'Connor, Éamon; Cherkaoui, Karim; Monaghan, Scott; Sheehan, Brendan; Povey, Ian M.; Hurley, Paul K. (AIP Publishing, 2017-01-19)
    In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage ...
  • Pimenov, Alexander; Slepneva, Svetlana; Huyet, Guillaume; Vladimirov, Andrei G. (American Physical Society, 2017-05-11)
    We present a theoretical approach to investigate the effect of dispersion in dynamical systems commonly described by time-delay models. The introduction of a polarization equation provides a means to introduce dispersion ...
  • Mura, Enrica E.; Gocalinska, Agnieszka; Juska, Gediminas; Moroni, Stefano T.; Pescaglini, Andrea; Pelucchi, Emanuele (AIP Publishing, 2017-03-13)
    The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of ...
  • Muñoz-Gorriz, J.; Monaghan, Scott; Cherkaoui, Karim; Suñé, J.; Hurley, Paul K.; Miranda, E. (Elsevier, 2017-04-13)
    The spatial distribution of failure sites in large area (104–105 μm2) metal-insulator-metal (MIM) capacitors with high-K dielectric (HfO2) is investigated using angular wavelets. The failure sites are the consequence of ...
  • Pampili, Pietro; Parbrook, Peter J. (Elsevier, 2016-12-04)
    In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and ...

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