Clavel, M. B.; Murphy-Armando, Felipe; Xie, Y.; Henry, K. T.; Kuhn, M.; Bodnar, R. J.; Khodaparast, G. A.; Smirnov, D.; Heremans, J. J.; Hudait, M. K.
(American Physical Society, 2022-12-27)
As forward-looking electron devices increasingly adopt high-mobility low-band-gap materials, such as germanium (Ge), questions remain regarding the feasibility of strain engineering in low-band-gap systems. Particularly, ...