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Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages
This paper presents the applications of the Hf0.3Zr0.7O2 ferroelectric with a thickness of 10 nm for tuning high-frequency devices such as filters, phase shifters, and phased antenna arrays in the X band when the low bias voltages in the range −3 V–+3 V are applied. In this respect, we show that a bandpass filter shifts its central frequency located at 10 GHz with 3 GHz, a phase shifter produces a phase difference of about 60 degrees in the X band, while the antenna array formed by two patched antennas is steering its lobe with ±32° at 10 GHz. These results open the way for the tunability of high frequency devices for very low power applications, which represent one of the most challenging issues in applied physics.
Antenna phased arrays , Band-pass filters , Ferroelectric devices , Ferroelectric materials , Hafnium compounds , Microstrip antenna arrays, , Phase shifters , Capacitors , Optical phase shifters , Interdigital transducers
Dragoman, M., Aldrigo, M., Modreanu, M. and Dragoman, D. (2017) 'Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages', Applied Physics Letters, 110(10), 103104. doi:10.1063/1.4978032
© The Authors 2017. Published by AIP Publishing.