Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages

Abstract

This paper presents the applications of the Hf0.3Zr0.7O2 ferroelectric with a thickness of 10 nm for tuning high-frequency devices such as filters, phase shifters, and phased antenna arrays in the X band when the low bias voltages in the range −3 V–+3 V are applied. In this respect, we show that a bandpass filter shifts its central frequency located at 10 GHz with 3 GHz, a phase shifter produces a phase difference of about 60 degrees in the X band, while the antenna array formed by two patched antennas is steering its lobe with ±32° at 10 GHz. These results open the way for the tunability of high frequency devices for very low power applications, which represent one of the most challenging issues in applied physics.