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Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages
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Date
2017-03-07
Authors
Dragoman, Mircea
Aldrigo, Martino
Modreanu, Mircea
Dragoman, Daniela
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Publisher
AIP Publishing
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Abstract
This paper presents the applications of the Hf0.3Zr0.7O2 ferroelectric with a thickness of 10 nm for tuning high-frequency devices such as filters, phase shifters, and phased antenna arrays in the X band when the low bias voltages in the range −3 V–+3 V are applied. In this respect, we show that a bandpass filter shifts its central frequency located at 10 GHz with 3 GHz, a phase shifter produces a phase difference of about 60 degrees in the X band, while the antenna array formed by two patched antennas is steering its lobe with ±32° at 10 GHz. These results open the way for the tunability of high frequency devices for very low power applications, which represent one of the most challenging issues in applied physics.
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Keywords
Antenna phased arrays , Band-pass filters , Ferroelectric devices , Ferroelectric materials , Hafnium compounds , Microstrip antenna arrays, , Phase shifters , Capacitors , Optical phase shifters , Interdigital transducers
Citation
Dragoman, M., Aldrigo, M., Modreanu, M. and Dragoman, D. (2017) 'Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages', Applied Physics Letters, 110(10), 103104. doi:10.1063/1.4978032
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© The Authors 2017. Published by AIP Publishing.