Fermi-dirac and random carrier distributions in quantum dot lasers
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Published Version
Date
2014
Authors
Hutchings, M.
O'Driscoll, Ian
Smowton, P. M.
Blood, P.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Using experimental gain and emission measurements as functions of temperature, a method is described to characterise the carrier distribution of radiative states in a quantum dot (QD) laser structure in terms of a temperature. This method is independent of the form of the inhomogeneous dot distribution. A thermal distribution at the lattice temperature is found between 200 and 300K. Below 200K the characteristic temperature exceeds the lattice temperature and the distribution becomes random below about 60 K. This enables the temperature range for which Fermi-Dirac statistics are applicable in QD laser threshold calculations to be identified. (C) 2014 AIP Publishing LLC.
Description
Keywords
Random-population , Temperature , Room , Quantum dots , Excited states , Wetting , Current density , Emission spectra
Citation
Hutchings, M., O'Driscoll, I., Smowton, P. M. and Blood, P. (2014) 'Fermi-dirac and random carrier distributions in quantum dot lasers', Applied Physics Letters, 104(3), pp. 031103. doi: 10.1063/1.4862813
Copyright
© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Hutchings, M., O'Driscoll, I., Smowton, P. M. and Blood, P. (2014) 'Fermi-dirac and random carrier distributions in quantum dot lasers', Applied Physics Letters, 104(3), pp. 031103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4862813