Coulomb effect inhibiting spontaneous emission in charged quantum dot
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Date
2010
Authors
Gradkowski, Kamil
Ochalski, Tomasz J.
Pavarelli, Nicola
Williams, David P.
Huyet, Guillaume
Liang, Baolai
Huffaker, Diana L.
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AIP Publishing
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Abstract
We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum well in a tunnel injection scheme by means of time-resolved photoluminescence. Under high-power excitation we observe a redshift in the QD emission of the order of 20 meV. The optical transition intensity shows a complex evolution, where an initial plateau phase is followed by an increase in intensity before a single-exponential decay. We attribute this behavior to the Coulomb interactions between the carriers in a charged QD and corroborate the experimental results with both a rate equation model and self-consistent eight-band k.p calculations. (C) 2010 American Institute of Physics. (doi:10.1063/1.3484143)
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Keywords
Quantum dots , III-V semiconductors|\ Quantum wells , Red shift , Photoluminescence
Citation
Gradkowski, K., Ochalski, T. J., Pavarelli, N., Williams, D. P., Huyet, G., Liang, B. and Huffaker, D. L. (2010) 'Coulomb effect inhibiting spontaneous emission in charged quantum dot', Applied Physics Letters, 97(9), pp. 091105. doi: 10.1063/1.3484143
Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gradkowski, K., Ochalski, T. J., Pavarelli, N., Williams, D. P., Huyet, G., Liang, B. and Huffaker, D. L. (2010) 'Coulomb effect inhibiting spontaneous emission in charged quantum dot', Applied Physics Letters, 97(9), pp. 091105 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3484143