A site-controlled quantum dot system offering both high uniformity and spectral purity
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Published Version
Date
2009
Authors
Mereni, Lorenzo O.
Dimastrodonato, Valeria
Young, Robert J.
Pelucchi, Emanuele
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
In this letter we report on the optical properties of site-controlled InGaAs quantum dots with GaAs barriers grown in pyramidal recesses by metalorganic vapor phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV and the spectral purity of emission lines from individual dots is found to be very high (18-30 mu eV), in contrast with other site-controlled dot systems. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3147213)
Description
Keywords
Excitons , Gallium arsenide , III-V semiconductors , Semiconductor quantum dots , Quantum dots , Epitaxy , Metalorganic vapor phase epitaxy , Linewidths
Citation
Mereni, L. O., Dimastrodonato, V., Young, R. J. and Pelucchi, E. (2009) 'A site-controlled quantum dot system offering both high uniformity and spectral purity', Applied Physics Letters, 94(22), pp. 223121. doi: 10.1063/1.3147213
Copyright
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Mereni, L. O., Dimastrodonato, V., Young, R. J. and Pelucchi, E. (2009) 'A site-controlled quantum dot system offering both high uniformity and spectral purity', Applied Physics Letters, 94(22), pp. 223121 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3147213