Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

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dc.contributor.author Afanas'ev, V. V.
dc.contributor.author Badylevich, M.
dc.contributor.author Stesmans, A.
dc.contributor.author Brammertz, G.
dc.contributor.author Delabie, A.
dc.contributor.author Sionke, S.
dc.contributor.author O'Mahony, Aileen
dc.contributor.author Povey, Ian M.
dc.contributor.author Pemble, Martyn E.
dc.contributor.author O'Connor, Éamon
dc.contributor.author Hurley, Paul K.
dc.contributor.author Newcomb, Simon B.
dc.date.accessioned 2017-07-28T11:47:32Z
dc.date.available 2017-07-28T11:47:32Z
dc.date.issued 2008
dc.identifier.citation Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2', Applied Physics Letters, 93(21), pp. 212104. doi: 10.1063/1.3021374 en
dc.identifier.volume 93
dc.identifier.issued 21
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4365
dc.identifier.doi 10.1063/1.3021374
dc.description.abstract Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.3021374) en
dc.description.sponsorship Fonds Wetenschappelijk Onderzoek (Fonds voor Wetenschappelijk Onderzoek FWO Vlaanderen” through Grant No. 1.5.057.07) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3021374
dc.rights © 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2', Applied Physics Letters, 93(21), pp. 212104 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3021374 en
dc.subject Alumina en
dc.subject Atomic layer deposition en
dc.subject Charge injection en
dc.subject Gallium arsenide en
dc.subject Hafnium compounds en
dc.subject High-k dielectric thin films en
dc.subject III-V semiconductors en
dc.subject Oxidation en
dc.subject Photoconductivity en
dc.subject Photoemission en
dc.subject Semiconductor-insulator boundaries en
dc.subject Ozone en
dc.subject Transmission electron microscopy en
dc.subject Photoelectric conversion en
dc.title Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2 en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000261212800017
dc.contributor.funder Fonds Wetenschappelijk Onderzoek
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 212104


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