Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
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Date
2008
Authors
Afanas'ev, V. V.
Badylevich, M.
Stesmans, A.
Brammertz, G.
Delabie, A.
Sionke, S.
O'Mahony, Aileen
Povey, Ian M.
Pemble, Martyn E.
O'Connor, Éamon
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.3021374)
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Keywords
Alumina , Atomic layer deposition , Charge injection , Gallium arsenide , Hafnium compounds , High-k dielectric thin films , III-V semiconductors , Oxidation , Photoconductivity , Photoemission , Semiconductor-insulator boundaries , Ozone , Transmission electron microscopy , Photoelectric conversion
Citation
Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2', Applied Physics Letters, 93(21), pp. 212104. doi: 10.1063/1.3021374
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© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2', Applied Physics Letters, 93(21), pp. 212104 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3021374