Broadband quantum dot micro-light-emitting diodes with parabolic sidewalls
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Published Version
Date
2008
Authors
Tanriseven, Selim
Maaskant, Pleun P.
Corbett, Brian M.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Arrays of long wavelength, self-organized InGaAs quantum dot micron sized light-emitting diodes (mu-LEDs) with parabolic sidewalls are introduced. The parabolic profiles of the mu-LEDs produced by resist reflow and controlled dry etching improve the extraction efficiency from the LEDs by redirection of the light into the escape cone by reflection from the sidewalls. A fourfold increase in the substrate emitted power density compared to a reference planar LED is measured. The reflected light is verified to be azimuthally polarized. The spectral width of the emission can be greater than 200 nm. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2898731)
Description
Keywords
Efficiency , Lasers , Light emitting diodes , Quantum dots , III-V semiconductors , Emission spectra , Charge injection
Citation
Tanriseven, S., Maaskant, P. and Corbett, B. (2008) 'Broadband quantum dot micro-light-emitting diodes with parabolic sidewalls', Applied Physics Letters, 92(12), pp. 123501. doi: 10.1063/1.2898731
Copyright
© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Tanriseven, S., Maaskant, P. and Corbett, B. (2008) 'Broadband quantum dot micro-light-emitting diodes with parabolic sidewalls', Applied Physics Letters, 92(12), pp. 123501 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2898731