Stabilization of self-focusing instability in wide-aperture semiconductor lasers
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O'Callaghan, J. R.
American Physical Society
A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 mum p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.
Linewidth enhancement factor , Large fresnel number , Broad-area lasers , Pattern-formation , Spatiotemporal dynamics , Transverse section , Nonlinear optics , Lateral-modes , Gain , Waves
Voignier, V., Houlihan, J., O’Callaghan, J. R., Sailliot, C. and Huyet, G. (2002) 'Stabilization of self-focusing instability in wide-aperture semiconductor lasers', Physical Review A, 65(5), 053807 (5pp). doi: 10.1103/PhysRevA.65.053807
© 2002, American Physical Society