Stabilization of self-focusing instability in wide-aperture semiconductor lasers

Show simple item record Voignier, Vincent Houlihan, John O'Callaghan, J. R. Sailliot, C Huyet, Guillaume 2017-08-29T09:04:00Z 2017-08-29T09:04:00Z 2002
dc.identifier.citation Voignier, V., Houlihan, J., O’Callaghan, J. R., Sailliot, C. and Huyet, G. (2002) 'Stabilization of self-focusing instability in wide-aperture semiconductor lasers', Physical Review A, 65(5), 053807 (5pp). doi: 10.1103/PhysRevA.65.053807 en
dc.identifier.volume 65
dc.identifier.issued 5
dc.identifier.issn 1050-2947
dc.identifier.doi 10.1103/PhysRevA.65.053807
dc.description.abstract A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 mum p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society en
dc.rights © 2002, American Physical Society en
dc.subject Linewidth enhancement factor en
dc.subject Large fresnel number en
dc.subject Broad-area lasers en
dc.subject Pattern-formation en
dc.subject Spatiotemporal dynamics en
dc.subject Transverse section en
dc.subject Nonlinear optics en
dc.subject Lateral-modes en
dc.subject Gain en
dc.subject Waves en
dc.title Stabilization of self-focusing instability in wide-aperture semiconductor lasers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Guillaume Huyet, Physics, University College Cork, Cork, Ireland. +353-21-490-3000. Email: en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000175744300050
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Review A en
dc.internal.IRISemailaddress en
dc.identifier.articleid 53807

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