Calculations of the A(1) phonon frequency in photoexcited tellurium

Tangney, P; Fahy, Stephen B.

Calculations of the A(1) phonon frequency in photoexcited tellurium

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Published Version

Date

1999

Authors

Tangney, P

Fahy, Stephen B.

Publisher

American Physical Society

Published Version

10.1103/PhysRevLett.82.4340

Abstract

Calculations of the A(1) phonon frequency in photoexcited tellurium are presented. The phonon frequency as a function of photoexcited carrier density and phonon amplitude is determined. Recent pump-probe experiments are interpreted in light of these calculations. It is proposed that, in conjunction with measurements of the phonon period in ultrafast pump-probe reflectivity experiments, the calculated frequency shifts can be used to infer the evolution of the density of photoexcited carriers on a subpicosecond time scale. (S0031-9007(99)09219-4).

Keywords

Initio molecular dynamics , Bonding properties , Silicon , Density , Approximation , Carriers , GaAs , Si

Citation

Tangney, P. and Fahy, S. (1999) ' Calculations of the A(1) phonon frequency in photoexcited tellurium', Physical Review Letters, 82(21), 4340-4343 (4pp). doi: 10.1103/PhysRevLett.82.4340