• Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics 

  O'Regan, Terence P.; Fischetti, M. V.; Soree, B.; Jin, S.; Magnus, W.; Meuris, M. (AIP Publishing, 2010)

  We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-kappa dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the ...
• Eight-band k⋅p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots 

  Andrzejewski, Janusz; Sek, Grzegorz; O'Reilly, Eoin P.; Fiore, Andrea; Misiewicz, Jan (AIP Publishing, 2010)

  We present eight-band k . p calculations of the electronic and polarization properties of columnar InzGa1-zAs quantum dots (CQD) with high aspect ratio embedded in an InxGa1-xAs/GaAs quantum well. Our model accounts for ...
• Precessional dynamics of Ni45Fe55 thin films for ultrahigh frequency integrated magnetics 

  Godsell, Jeffrey F.; Kulkarni, Santosh; O'Donnell, Terence; Roy, Saibal (AIP Publishing, 2010)

  Future monolithic point of load switched mode power supplies will be expected to meet the energy requirements of miniaturized, high functionality electronic devices. Recently, Ni45Fe55 has emerged as a potentially important ...
• Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors 

  Akhavan, Nima Dehdashti; Afzalian, Aryan; Lee, Chi-Woo; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; Yu, Ran; Fagas, Giorgos; Colinge, Jean-Pierre (AIP Publishing, 2010)

  In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect ...
• Low temperature exfoliation process in hydrogen-implanted germanium layers 

  Ferain, Isabelle P.; Byun, K. Y.; Colinge, C. A.; Brightup, S.; Goorsky, M. S. (AIP Publishing, 2010)

  The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5 x 10(16) H(2)(+) cm(-2) at 180 keV and a ...

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