Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser

Thumbnail Image
5131.pdf(4.2 MB)
Published Version
Zhang, Jing
Haq, Bahawal
O'Callaghan, James
Gocalińska, Agnieszka M.
Pelucchi, Emanuele
Trindade, António José
Corbett, Brian M.
Morthier, Geert
Roelkens, Gunther
Journal Title
Journal ISSN
Volume Title
Optical Society of America
Published Version
Research Projects
Organizational Units
Journal Issue
An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 × 970 μm2 III-V coupon, defined on a III-V epitaxial wafer. A second-order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide-coupled output power above 2 mW is obtained at 20°C. Single mode operation around 1550 nm with > 40 dB side mode suppression ratio (SMSR) is realized. This new integration approach allows for the very efficient use of the III-V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer. It also allows for the intimate integration of III-V opto-electronic components based on different epitaxial layer structures.
DFB laser , Silicon waveguide circuit , Adiabatic taper structure
Zhang, J., Haq, B., O’Callaghan, J., Gocalinska, A., Pelucchi, E., Trindade, A. J., Corbett, B., Morthier, G. and Roelkens, G. (2018) 'Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser', Optics Express, 26(7), pp. 8821-8830. doi: 10.1364/OE.26.008821
© 2018, Optical Society of America under the terms of the OSA Open Access Publishing Agreement