Process of formation of porous layers in n-InP

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Date
2017-05
Authors
Quill, Nathan
Clancy, Ian
Nakahara, Shohei
Belochapkine, Serguei
O'Dwyer, Colm
Buckley, D. Noel
Lynch, Robert P.
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Publisher
Electrochemical Society
Published Version
10.1149/07704.0067ecst
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Abstract
This paper describes variations in current density observed in linear sweep voltammetry curves during the anodization of n-InP in aqueous KOH electrolyte and how these variations arise. The analysis is performed by stopping the anodization after different durations of etching and observing via scanning electron microscopy and other techniques the porous structures that have formed. A mathematical model for the expansion and merging of domains of pores that propagate preferentially along the <111>A directions is also presented and used to explain the previously mentioned variations in current density.
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Keywords
Semiconducting indium phosphide , Electrolytes , Scanning electron microscopy , Anodizations , Linear sweep voltammetry , Porous layers , Porous structures
Citation
Quill, N., Clancy, I., Nakahara, S., Belochapkine, S., O'Dwyer, C., Buckley, D. N. and Lynch, R. P. (2017) 'Process of Formation of Porous Layers in n-InP', ECS Transactions, 77(4), pp. 67-96. doi: 10.1149/07704.0067ecst
Link to publisher’s version
http://ecst.ecsdl.org/content/77/4/67.abstract
URI
https://hdl.handle.net/10468/6172
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Chemistry - Journal Articles
Tyndall National Institute - Journal Articles
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© 2017 ECS - The Electrochemical Society