Sensing properties of assembled Bi2S3 nanowire arrays

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Sensing properties of assembled Bi2S3 nanowire arrays

Kunakova, Gunta; Meija, Raimonds; Bite, I.; Kosmaca, Jelena; Varghese, Justin M.; Prikulis, Juris; Erts, Donats
Date: 2015-08-15
Copyright: © 2015 The Royal Swedish Academy of Sciences. This is an author-created, un-copyedited version of an article accepted for publication in Physica Scripta. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://iopscience.iop.org/article/10.1088/0031-8949/90/9/094017
Related: http://iopscience.iop.org/article/10.1088/0031-8949/90/9/094017
Citation: Kunakova, G., Meija, R., Bite, I., Prikulis, J., Kosmaca, J., Varghese, J., Holmes, J. D. and Donats, E. (2015) 'Sensing properties of assembled Bi 2 S 3 nanowire arrays', Physica Scripta, 90(9), 094017 (4 pp). doi: 10.1088/0031-8949/90/9/094017
Published Version: 10.1088/0031-8949/90/9/094017

Abstract:

Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other types of nanowire RH sensor devices.

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