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Electromagnetic energy harvesting based on HfZrO tunneling junctions
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Date
2018-08-31
Authors
Modreanu, Mircea
Dragoman, Mircea
Povey, Ian M.
Aldrigo, Martino
Dinescu, Adrian
Dragoman, Daniela
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Published Version
Abstract
HfZrO ferroelectrics with a thickness of 6 nm were grown directly on Si using atomic layer deposition, top and bottom metallic electrodes being subsequently deposited by electron-beam metallization techniques. Depending on the polarity of the ±10 V poling voltages, the current–voltage dependence of these tunneling diodes shows a rectifying behavior for different polarizations, the ON–OFF ratio being about 104. Because the currents are at mA level, the HfZrO tunneling diodes coupled to an antenna array can harvest electromagnetic energy at 26 GHz (a bandwidth designated for internet of things), with a responsivity of 63 V W−1 and a NEP of 4 nW/Hz0.5.
Description
Keywords
HfZrO ferroelectrics , Tunneling , Harvesting , Internet of things
Citation
Dragoman, M. L., Modreanu, M., Povey, I. M., Aldrigo, M., Dinescu, A. and Dragoman, D. (2018) 'Electromagnetic energy harvesting based on HfZrO tunneling junctions', Nanotechnology, 29(44), 445203 (7pp). doi:10.1088/1361-6528/aada6a
Link to publisher’s version
Copyright
© 2018, IOP Publishing. All rights reserved. Reproduced by permission of the publisher. This is an author-created, un-copyedited version of an article published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1088/1361-6528/aada6a