Full text restriction information:Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date:2019-08-31
Citation:Dragoman, M. L., Modreanu, M., Povey, I. M., Aldrigo, M., Dinescu, A. and Dragoman, D. (2018) 'Electromagnetic energy harvesting based on HfZrO tunneling junctions', Nanotechnology, 29(44), 445203 (7pp). doi:10.1088/1361-6528/aada6a
HfZrO ferroelectrics with a thickness of 6 nm were grown directly on Si using atomic layer deposition, top and bottom metallic electrodes being subsequently deposited by electron-beam metallization techniques. Depending on the polarity of the ±10 V poling voltages, the current–voltage dependence of these tunneling diodes shows a rectifying behavior for different polarizations, the ON–OFF ratio being about 104. Because the currents are at mA level, the HfZrO tunneling diodes coupled to an antenna array can harvest electromagnetic energy at 26 GHz (a bandwidth designated for internet of things), with a responsivity of 63 V W−1 and a NEP of 4 nW/Hz0.5.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement