Inverse scattering method design of regrowth-free single-mode semiconductor lasers for monolithic integration

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IPRSN-2018-ITu4B.4.pdf(520.85 KB)
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Date
2018-07
Authors
Shortiss, Kevin
Dernaika, Mohamad
Caro, Ludovic
Seifikar, Masoud
Peters, Frank H.
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Publisher
Optical Society of America
Published Version
10.1364/IPRSN.2018.ITu4B.4
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Abstract
An inverse scattering method is used to design single moded lasers, using etched depth insensitive pits as perturbations in the laser cavity. We compare 10 pit, 15 pit and 20 pit devices, and report strongly single moded lasers (>40dB).
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Keywords
Bragg reflectors , Distributed feedback lasers , Inverse scattering , Refractive index , Semiconductor lasers , Single mode lasers
Citation
Shortiss, K., Dernaika, M., Caro, L., Seifikar, M. and Peters, F. H. (2018) 'Inverse scattering method design of regrowth-free single-mode semiconductor lasers for monolithic integration', Proceedings of Advanced Photonics Congress 2018, Zurich, Switzerland, 2-5 July, ITu4B.4 (2pp). doi:10.1364/IPRSN.2018.ITu4B.4
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http://www.osapublishing.org/abstract.cfm?URI=IPRSN-2018-ITu4B.4
URI
https://hdl.handle.net/10468/7670
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Tyndall National Institute - Conference Items
Physics - Conference Items
Copyright
© 2018, the Authors. Published by the Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.