Inverse scattering method design of regrowth-free single-mode semiconductor lasers for monolithic integration

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Inverse scattering method design of regrowth-free single-mode semiconductor lasers for monolithic integration

Shortiss, Kevin; Dernaika, Mohamad; Caro, Ludovic; Seifikar, Masoud; Peters, Frank H.
Date: 2018-07
Copyright: © 2018, the Authors. Published by the Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
Related: http://www.osapublishing.org/abstract.cfm?URI=IPRSN-2018-ITu4B.4
Citation: Shortiss, K., Dernaika, M., Caro, L., Seifikar, M. and Peters, F. H. (2018) 'Inverse scattering method design of regrowth-free single-mode semiconductor lasers for monolithic integration', Proceedings of Advanced Photonics Congress 2018, Zurich, Switzerland, 2-5 July, ITu4B.4 (2pp). doi:10.1364/IPRSN.2018.ITu4B.4
Published Version: 10.1364/IPRSN.2018.ITu4B.4

Abstract:

An inverse scattering method is used to design single moded lasers, using etched depth insensitive pits as perturbations in the laser cavity. We compare 10 pit, 15 pit and 20 pit devices, and report strongly single moded lasers (>40dB).

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