Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

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dc.contributor.author Ovanesyan, Rafaiel A.
dc.contributor.author Filatova, Ekaterina A.
dc.contributor.author Elliott, Simon D.
dc.contributor.author Hausmann, Dennis M.
dc.contributor.author Smith, David C.
dc.contributor.author Agarwal, Sumit
dc.date.accessioned 2019-10-23T04:02:04Z
dc.date.available 2019-10-23T04:02:04Z
dc.date.issued 2019-09-24
dc.identifier.citation Ovanesyan, R. A., Filatova, E. A., Elliott, S. D., Hausmann, D. M., Smith, D. C. and Agarwal, S. (2019) 'Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook', Journal of Vacuum Science & Technology A, 37(6), 060904. (23pp.) DOI: 10.1116/1.5113631 en
dc.identifier.volume 37 en
dc.identifier.issued 6 en
dc.identifier.startpage 1 en
dc.identifier.endpage 23 en
dc.identifier.issn 0734-2101
dc.identifier.uri http://hdl.handle.net/10468/8820
dc.identifier.doi 10.1116/1.5113631 en
dc.description.abstract The fabrication of next-generation semiconductor devices has created a need for low-temperature (≤400 °C) deposition of highly-conformal (>95%) SiO2, SiNx, and SiC films on high-aspect-ratio nanostructures. To enable the growth of these Si-based dielectric films, semiconductor manufacturers are transitioning from chemical vapor deposition to atomic layer deposition (ALD). Currently, SiO2 films deposited using ALD are already being integrated into semiconductor device manufacturing. However, substantial processing challenges remain for the complete integration of SiNx films deposited by ALD, and there are no known processes for ALD of SiC at temperatures that are compatible with semiconductor device manufacturing. In this focused review, the authors look at the status of thermal and plasma-assisted ALD of these three Si-based dielectric films. For SiO2 ALD, since low-temperature processes that deposit high-quality films are known, the authors focus primarily on the identification of surface reaction mechanisms using chlorosilane and aminosilane precursors, as this provides a foundation for the ALD of SiNx and SiC, two material systems where substantial processing challenges still exist. Using an understanding of the surface reaction mechanisms, the authors describe the underlying reasons for the processing challenges during ALD of SiNx and SiC and suggest methodologies for process improvement. While both thermal and plasma-assisted SiNx ALD processes have been reported in the literature, the thermal NH3-based ALD processes require processing temperatures >500 °C and large NH3 doses. On the other hand, plasma-assisted SiNx ALD processes suffer from nonuniform film properties or low conformality when deposited on high-aspect-ratio nanostructures. In the SiNx section, the authors provide a broad overview of the currently known thermal and plasma-assisted SiNx ALD processes using chlorosilane, trisilylamine, and aminosilane precursors, describe the process shortcomings, and review the literature on precursor reaction pathways. The authors close this section with suggestions for improving the film properties and conformality. In the case of SiC, the authors first outline the limitations of previously reported SiC ALD processes and highlight that unlike SiO2 and SiNx plasma-assisted ALD, no straightforward pathway for low-temperature plasma-assisted growth is currently apparent. The authors speculate that low-temperature ALD of SiC may require the design of completely new precursors. Finally, they summarize the progress made in the ALD of C-containing SiNx and SiO2 films, which may provide many of the benefits of SiC ALD in semiconductor manufacturing. In closing, through this review, the authors hope to provide the readers with a comprehensive knowledge of the surface reactions mechanisms during ALD of Si-based dielectrics, which would provide a foundation for future precursor and process development. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://avs.scitation.org/doi/full/10.1116/1.5113631
dc.rights © The Author(s) 2019. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Atomic layer en
dc.subject Silicon-based dielectrics en
dc.subject Semiconductor manufacturing en
dc.subject Atomic layer deposition (ALD) en
dc.title Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ekaterina Filatova, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email:ekaterina.filatova@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Lam Research Corporation en
dc.contributor.funder Lam Research Foundation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Vacuum Science & Technology A en
dc.internal.IRISemailaddress ekaterina.filatova@tyndall.ie en
dc.identifier.articleid 060904 en


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© The Author(s) 2019. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Except where otherwise noted, this item's license is described as © The Author(s) 2019. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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