Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation

Simple item page
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorNegara, Muhammad A.
dc.contributor.authorModreanu, Mircea
dc.contributor.authorHurley, Paul K.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorMcDonnell, S.
dc.contributor.authorHughes, Gregory
dc.contributor.authorWright, S.
dc.contributor.authorBarklie, R. C.
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T. C. Q.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.date.accessioned2017-07-12T09:07:44Z
dc.date.available2017-07-12T09:07:44Z
dc.date.issued2008-09-28
dc.description.abstractHigh dielectric constant hafnium oxide films were formed by electron beam (e-beam) evaporation on HF last terminated silicon (100) wafers. We report on the influence of low energy argon plasma (similar to 70 eV) and oxygen flow rate on the electrical, chemical, and structural properties of metal-insulator-silicon structures incorporating these e-beam deposited HfO(2) films. The use of the film-densifying low energy argon plasma during the deposition results in an increase in the equivalent oxide thickness (EOT) values. We employ high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS), and medium energy ion scattering experiments to investigate and understand the mechanisms leading to the EOT increase. We demonstrate very good agreement between the interfacial silicon oxide thicknesses derived independently from XPS and HRTEM measurements. We find that the e-beam evaporation technique enabled us to control the SiO(x) interfacial layer thickness down to similar to 6 angstrom. Very low leakage current density (< 10(-4) A/cm(2)) is measured at flatband voltage +1 V into accumulation for an estimated EOT of 10.9 +/- 0.1 angstrom. Based on a combined HRTEM and capacitance-voltage (CV) analysis, employing a quantum-mechanical CV fitting procedure, we determine the dielectric constant (k) of HfO(2) films, and associated interfacial SiO(x) layers, formed under various processing conditions. The k values are found to be 21.2 for HfO(2) and 6.3 for the thinnest (similar to 6 angstrom) SiO(x) interfacial layer. The cross-wafer variations in the physical and electrical properties of the HfO(2) films are presented.en
dc.description.sponsorshipScience Foundation Ireland (05/IN/1751);en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid64113
dc.identifier.citationCherkaoui, K., Monaghan, S., Negara, M. A., Modreanu, M., Hurley, P. K., O’Connell, D., McDonnell, S., Hughes, G., Wright, S., Barklie, R. C., Bailey, P. and Noakes, T. C. Q. (2008) 'Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation', Journal of Applied Physics, 104(6), pp. 064113. doi: 10.1063/1.2978209en
dc.identifier.doi10.1063/1.2978209
dc.identifier.endpage10
dc.identifier.issn0021-8979
dc.identifier.issued6
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4221
dc.identifier.volume104
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2978209
dc.rights© 2008 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Cherkaoui, K., Monaghan, S., Negara, M. A., Modreanu, M., Hurley, P. K., O’Connell, D., McDonnell, S., Hughes, G., Wright, S., Barklie, R. C., Bailey, P. and Noakes, T. C. Q. (2008) 'Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation', Journal of Applied Physics, 104(6), pp. 064113 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2978209en
dc.subjectGate dielectricsen
dc.subjectHafnium oxideen
dc.subjectInterfaceen
dc.subjectSiliconen
dc.subjectDefectsen
dc.subjectDepositionen
dc.subjectLayeren
dc.subjectSien
dc.subjectTransistorsen
dc.subjectThicknessen
dc.subjectElectron beam depositionen
dc.subjectThin filmsen
dc.subjectX-ray photoelectron spectroscopyen
dc.subjectDielectric thin filmsen
dc.subjectHigh resolution transmission electron microscopyen
dc.titleElectrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporationen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3111.pdf
Size:
989.03 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles