Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors

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dc.contributor.authorColinge, Jean-Pierre
dc.contributor.authorAfzalian, Aryan
dc.contributor.authorLee, Chi-Woo
dc.contributor.authorYan, Ran
dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:47:33Z
dc.date.available2017-07-28T11:47:33Z
dc.date.issued2008
dc.description.abstractThe minimum energy of the first conduction subband varies with gate voltage in trigate silicon-on-insulator metal-oxide-silicon field-effect transistors (MOSFETs) in subthreshold operation. In an inversion-mode trigate device, the energy level of the lowest subband increases with electron concentration, while it decreases under the same conditions in some accumulation-mode devices. As a result of this quantum effect, the subthreshold swing of accumulation-mode trigate FETs is smaller than predicted by classical theory. This effect is not observed in fin-shaped FETs and gate-all-around MOSFETs and can be amplified by modifying the device cross section. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2907330)en
dc.description.sponsorshipScience Foundation Ireland (Grant No. 05/IN/I888)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid133511
dc.identifier.citationColinge, J.-P., Afzalian, A., Lee, C.-W., Yan, R. and Akhavan, N. D. (2008) 'Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors', Applied Physics Letters, 92(13), pp. 133511. doi: 10.1063/1.2907330en
dc.identifier.doi10.1063/1.2907330
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued13
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4371
dc.identifier.volume92
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2907330
dc.rights© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Colinge, J.-P., Afzalian, A., Lee, C.-W., Yan, R. and Akhavan, N. D. (2008) 'Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors', Applied Physics Letters, 92(13), pp. 133511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2907330en
dc.subjectSoi mosfetsen
dc.subjectGateen
dc.subjectSiliconen
dc.subjectField effect transistorsen
dc.subjectWave functionsen
dc.subjectMOSFETsen
dc.subjectElectron gasen
dc.titleInfluence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistorsen
dc.typeArticle (peer-reviewed)en
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