Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods

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dc.contributor.authorO'Connor, Éamon
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Mahony, Aileen
dc.contributor.authorPovey, Ian M.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorBrammertz, G.
dc.contributor.authorHeyns, M.
dc.contributor.authorNewcomb, Simon B.
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderIntel Corporation
dc.date.accessioned2017-07-28T11:47:32Z
dc.date.available2017-07-28T11:47:32Z
dc.date.issued2009
dc.description.abstractElectrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1-xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated. Capacitance-voltage (CV) measurements indicated large temperature and frequency dispersion at positive gate bias in devices using n-type GaAs and low In content (x=0.30, 0.15) InxGa1-xAs layers, which is significantly reduced for devices using In0.53Ga0.47As. For In0.53Ga0.47As devices, the CV response at negative gate bias is most likely characteristic of an interface state response and may not be indicative of true inversion. The conductance technique on Pd/HfO2/In0.53Ga0.47As/InP shows reductions in interface state densities by In0.53Ga0.47As surface passivation and forming gas annealing (325 degrees C). (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3089688)en
dc.description.sponsorshipScience Foundation Ireland (Grant Nos. 05/IN/1751, 07/SRC/I1172)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid102902
dc.identifier.citationO’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V. and Hurley, P. K. (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods', Applied Physics Letters, 94(10), pp. 102902. doi: 10.1063/1.3089688en
dc.identifier.doi10.1063/1.3089688
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued10
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4363
dc.identifier.volume94
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3089688
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V. and Hurley, P. K. (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods', Applied Physics Letters, 94(10), pp. 102902 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3089688en
dc.subjectSiliconen
dc.subjectDevicesen
dc.subjectAnnealingen
dc.subjectAtomic layer epitaxial growthen
dc.subjectGallium arsenideen
dc.subjectHafnium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectMIS structuresen
dc.subjectMOS capacitorsen
dc.subjectPalladiumen
dc.subjectPassivationen
dc.subjectSemiconductor epitaxial layersen
dc.subjectSemiconductor growthen
dc.subjectIII-V semiconductorsen
dc.subjectEpitaxyen
dc.subjectTemperature measurementen
dc.subjectCapacitanceen
dc.subjectInterfacial propertiesen
dc.titleTemperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methodsen
dc.typeArticle (peer-reviewed)en
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