Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

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dc.contributor.authorKesim, M. T.
dc.contributor.authorZhang, J.
dc.contributor.authorTrolier-McKinstry, S.
dc.contributor.authorMantese, J. V.
dc.contributor.authorWhatmore, Roger W.
dc.contributor.authorAlpay, S. P.
dc.contributor.funderMaterials Research Institute, Pennsylvania State University
dc.contributor.funderNational Science Foundation
dc.date.accessioned2017-09-20T10:06:32Z
dc.date.available2017-09-20T10:06:32Z
dc.date.issued2013
dc.description.abstractFerroelectric lead zirconate titanate [Pb(ZrxTi1-xO)(3), (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25-800 degrees C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042 mu C cm(-2)degrees C-1, comparable to bulk values) at a growth temperature of 550 degrees C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process. (C) 2013 AIP Publishing LLC.en
dc.description.sponsorshipNational Science Foundation [ECS-0335765]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid204101
dc.identifier.citationKesim, M. T., Zhang, J., Trolier-McKinstry, S., Mantese, J. V., Whatmore, R. W. and Alpay, S. P. (2013) 'Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses', Journal of Applied Physics, 114(20), 204101 (7pp). doi: 10.1063/1.4833555en
dc.identifier.doi10.1063/1.4833555
dc.identifier.endpage7
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued20
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4719
dc.identifier.volume114
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4833555
dc.rights© 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kesim, M. T., Zhang, J., Trolier-McKinstry, S., Mantese, J. V., Whatmore, R. W. and Alpay, S. P. (2013) 'Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses', Journal of Applied Physics, 114(20), 204101 (7pp). doi: 10.1063/1.4833555 and may be found at http://aip.scitation.org/doi/10.1063/1.4833555en
dc.subjectLead zirconate titanateen
dc.subjectPyroelectric effectsen
dc.subjectPolarizationen
dc.subjectThin film devicesen
dc.subjectPZT filmsen
dc.titlePyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stressesen
dc.typeArticle (peer-reviewed)en
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