InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer

dc.contributor.authorMathews, Ian P.
dc.contributor.authorO'Mahony, Donagh
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorManganaro, Marina
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorSchmidt, Michael
dc.contributor.authorMorrison, Alan P.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderEnterprise Ireland
dc.contributor.funderEuropean Regional Development Fund
dc.contributor.funderHigher Education Authority
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T09:23:24Z
dc.date.available2017-07-28T09:23:24Z
dc.date.issued2013
dc.description.abstractSingle junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2). (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4789521)en
dc.description.sponsorshipEnterprise Ireland, European Regional Development fund (through Grant No. TD/08/338 for the project MODCON-PV); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme); Science Foundation Ireland (Grant Nos. 09/SIRG/I1621, 10/IN.1/I3000, and 07/SRC/I117)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid33906
dc.identifier.citationMathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906. doi: 10.1063/1.4789521en
dc.identifier.doi10.1063/1.4789521
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued3
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4290
dc.identifier.volume102
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4789521
dc.rights© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Mathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4789521en
dc.subjectSolar cellsen
dc.subjectIII-V semiconductorsen
dc.subjectLattice constantsen
dc.subjectGolden
dc.subjectDiffusionen
dc.titleInAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layeren
dc.typeArticle (peer-reviewed)en
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