Indefinite. Restriction lift date: 10000-01-01
Chemical vapour deposition of complex ferroic oxide thin films
| dc.check.chapterOfThesis | 4,5,6 | |
| dc.check.date | 10000-01-01 | |
| dc.check.embargoformat | E-thesis on CORA only | en |
| dc.check.info | Indefinite | en |
| dc.check.opt-out | Yes | en |
| dc.check.reason | This thesis is due for publication or the author is actively seeking to publish this material | en |
| dc.contributor.advisor | Pemble, Martyn E. | en |
| dc.contributor.advisor | Whatmore, Roger W. | en |
| dc.contributor.author | Deepak, Nitin | |
| dc.contributor.funder | International Centre for Graduate Education in Micro and Nano Engineering (ICGEE) | en |
| dc.contributor.funder | Science Foundation Ireland | en |
| dc.date.accessioned | 2015-06-19T14:10:04Z | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014 | |
| dc.description.abstract | Herein is presented a novel chemical vapour deposition (CVD) route for the fabrication of oxide ferroelectrics. A versatile layer-by-layer growth mode was developed to prepare naturally super-latticed bismuth based materials belonging to the Aurivillius phase family, with which good control over composition and crystal structure was achieved. In chapter 3, the effect of epitaxial strain on one of the very simple oxide materials TiO2 was studied. It has been found that the ultra-thin TiO2 films demonstrate ferroelectric behaviour when grown on NdGaO3 substrates. TiO2 exists in various crystal phases, but none of them show ferroelectric behaviour. The epitaxial strain due to the substrate, changes the crystal structure from tetragonal to orthorhombic which in turn leads to ferroelectric behaviour. In chapter 4, a unique growth method for multiferroic BiFeO3 (BFO) thin films is shown, where a phase pure BFO thin films can be prepared even in the presence of excess bismuth precursor during the growth process. This type of growth is usually called adsorption controlled growth and can be used for growing various bismuth containing compounds, where the volatility of bismuth can create various types of defects. Chapter 5 describes the growth of Bi4Ti3O12 thin films in a layer-by-layer growth mode. In this section, the effect of Bi and Ti precursor flows on the growth of thin films is discussed and it is shown that how change in precursor flows leads to out-ofphase boundary defects during the layer-by-layer growth mode. In chapter 6, the growth of a compound Bi5Ti3FeO15, which is a 1:1 mixture of BiFeO3 and Bi4Ti3O12, is presented. The growth mechanism of Bi5Ti3FeO15 thin films is presented, where the Fe precursor flow was controlled from zero to the insertion of one full BiFeO3 perovskite unit cell into the Bi4Ti3O12 structure in addition, the effect of iron precursor flow on crystalline properties is demonstrated. The methods presented in this thesis can be adopted to grow ferroelectric and multiferroic films for industrial applications. | en |
| dc.description.status | Not peer reviewed | en |
| dc.description.version | Accepted Version | |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Deepak, N. 2014. Chemical vapour deposition of complex ferroic oxide thin films. PhD Thesis, University College Cork. | en |
| dc.identifier.uri | https://hdl.handle.net/10468/1853 | |
| dc.language.iso | en | en |
| dc.publisher | University College Cork | en |
| dc.rights | © 2014, Nitin Deepak. | en |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/ | en |
| dc.subject | Ferroelectrics | en |
| dc.subject | Multiferroics | en |
| dc.subject | Chemical vapour deposition | en |
| dc.thesis.opt-out | true | |
| dc.title | Chemical vapour deposition of complex ferroic oxide thin films | en |
| dc.type | Doctoral thesis | en |
| dc.type.qualificationlevel | Doctoral | en |
| dc.type.qualificationname | PhD (Science) | en |
