Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells

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dc.contributor.authorUsman, Muhammad
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-07-25T14:16:23Z
dc.date.available2017-07-25T14:16:23Z
dc.date.issued2014
dc.description.abstractLarge-supercell tight-binding calculations are presented for GaBixAs1-x/GaAs single quantum wells (QWs) with Bi fractions x of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the alloy disorder. A large full-width-half-maximum (FWHM) is estimated in the ground state interband transition energy (approximate to 33 meV) at 3.125% Bi, consistent with recent photovoltage measurements for similar Bi compositions. Additionally, the alloy disorder effects are predicted to become more pronounced as the QW width is increased. However, they are less strong at the higher Bi composition (12.5%) required for the design of temperature-stable lasers, with a calculated FWHM of approximate to 23.5 meV at x = 12.5%. (C) 2014 AIP Publishing LLC.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid71103
dc.identifier.citationUsman, M. and O'Reilly, E. P. (2014) 'Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells', Applied Physics Letters, 104(7), pp. 071103. doi: 10.1063/1.4865827en
dc.identifier.doi10.1063/1.4865827
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued7
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4259
dc.identifier.volume104
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257974/EU/BIsmide And Nitride Components for High temperature Operation/BIANCHO
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4865827
dc.rights© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Usman, M. and O'Reilly, E. P. (2014) 'Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells', Applied Physics Letters, 104(7), pp. 071103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4865827en
dc.subjectQuantum wellsen
dc.subjectValence bandsen
dc.subjectProbability theoryen
dc.subjectConduction bandsen
dc.subjectBand gapen
dc.titleAtomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wellsen
dc.typeArticle (peer-reviewed)en
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