Size-dependent bandwidth of semipolar (1122) light-emitting-diodes

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dc.contributor.authorHaemmer, M.
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorAkhter, Mahbub
dc.contributor.authorDinh, Duc V.
dc.contributor.authorQuan, Zhiheng
dc.contributor.authorZhao, Jian
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorCorbett, Brian M.
dc.date.accessioned2018-03-09T12:55:07Z
dc.date.available2018-03-09T12:55:07Z
dc.date.issued2018
dc.description.abstractThe limited modulation bandwidth of commercial light-emitting diodes (LEDs) is one of the critical bottlenecks for visible light communications. Possible approaches to increase the bandwidth include the use of micron sized LEDs, which can withstand higher current densities, as well as the use of LED structures that are grown on different crystal planes to the conventional polar c-plane. We compare c-plane InGaN/GaN LEDs with semipolar ( 112¯¯¯2 ) LEDs containing a 4- and 8-nm single quantum well. The modulation bandwidth of semipolar LEDs with active areas varying from 200×200 to 30×30μm2 is shown to be governed by both current density and size. A small signal bandwidth of over 800 MHz for a relatively low applied current density of 385 A/cm2 is reported for 30×30μm2 LEDs with 8-nm thick quantum well. An optical link using an easy non-return-to-zero ON–OFF keying modulation scheme with a data rate of 1.5 Gb/s is demonstrated.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHaemmer, M., Roycroft, B., Akhter, M., Dinh, D. V., Quan, Z., Zhao, J., Parbrook, P. J. and Corbett, B. (2018) 'Size-dependent bandwidth of semipolar (1122) light-emitting-diodes', IEEE Photonics Technology Letters, 30(5), pp. 439-442. doi: 10.1109/LPT.2018.2794444en
dc.identifier.doi10.1109/LPT.2018.2794444
dc.identifier.endpage442
dc.identifier.issn1041-1135
dc.identifier.issued5
dc.identifier.journaltitleIEEE Photonics Technology Lettersen
dc.identifier.startpage439
dc.identifier.urihttps://hdl.handle.net/10468/5609
dc.identifier.volume30
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en
dc.relation.urihttp://ieeexplore.ieee.org/document/8274939/
dc.rights© 2018, IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.en
dc.rights.urihttps://www.ieee.org/publications_standards/publications/rights/index.html
dc.subjectLight emitting diodesen
dc.subjectBandwidthen
dc.subjectCurrent densityen
dc.subjectModulationen
dc.subjectFrequency responseen
dc.subjectRadiative recombinationen
dc.subjectResistanceen
dc.titleSize-dependent bandwidth of semipolar (1122) light-emitting-diodesen
dc.typeArticle (peer-reviewed)en
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