Synthesis of component-controllable monolayer Mo x W (1− x ) S 2 y Se 2(1− y ) alloys with continuously tunable band gap and carrier type

dc.contributor.authorLi, You
dc.contributor.authorWang, Kangkang
dc.contributor.authorWang, Yiwen
dc.contributor.authorQian, Ziyue
dc.contributor.authorHuang, Wenbin
dc.contributor.authorWang, Junqi
dc.contributor.authorYang, Qichao
dc.contributor.authorWang, Honggang
dc.contributor.authorLiao, Junyi
dc.contributor.authorHussain, Sabir
dc.contributor.authorXie,, Liming
dc.contributor.authorQi, Junjie
dc.contributor.funderNatural Science Foundation of Beijing Municipality
dc.contributor.funderBeijing Municipal Natural Science Foundation
dc.contributor.funderFundamental Research Funds for the Central Universities
dc.date.accessioned2024-01-11T15:17:30Z
dc.date.available2024-01-03T14:11:53Zen
dc.date.available2024-01-11T15:17:30Z
dc.date.issued2023-11-24
dc.date.updated2024-01-03T14:11:55Zen
dc.description.abstractAlloying can effectively modify electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). However, efficient and simple methods to synthesize atomically thin TMD alloys need to be further developed. In this study, we synthesized 25 monolayer MoxW(1−x)S2ySe2(1−y) alloys by using a new liquid phase edge epitaxy (LPEE) growth method with high controllability. This straightforward approach can be used to obtain monolayer materials and operates on a self-limiting growth mechanism. The process allows the liquid solution to come into contact with the two-dimensional grains only at their edges, resulting in epitaxy confined only along the in-plane direction, which produces exclusively monolayer epitaxy. By controlling the weight ratio of MoS2/WSe2 (MoSe2/WS2), 25 monolayer MoxW(1−x)S2ySe2(1−y) alloys with different atomic ratios can be obtained on sapphire substrates, with band gap ranging from WS2 (1.55 eV) to MoSe2 (1.99 eV) and a continuously broad spectrum ranging from 623 nm to 800 nm. By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of MoxW(1−x)S2ySe2(1−y) alloys from n-type to bipolar type is achieved for the first time. This general synthetic strategy provides a foundation for the development of monolayer TMD alloys with multiple components and various 2D materials.en
dc.description.sponsorshipBeijing Natural Science Foundation (2202030); Beijing Municipal Science &Technology Commission; Fundamental Research Funds for Central Universities (FRF-GF-19-001A, FRF-GF-19-002B).
dc.description.statusPeer revieweden
dc.description.versionPublished Version
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLi, Y., Wang, K., Wang, Y., Qian, Z., Huang, W., Wang, J., Yang, Q., Wang, H., Liao, J., Hussain, S., Xie, L. and Qi, J. (2023) ‘Synthesis of component-controllable monolayer Mo x W (1− x ) S 2 y Se 2(1− y ) alloys with continuously tunable band gap and carrier type’, RSC Advances, 13(49), pp. 34464–34474. Available at: https://doi.org/10.1039/D3RA07065D
dc.identifier.doihttps://doi.org/10.1039/D3RA07065D
dc.identifier.endpage34474
dc.identifier.issn2046-2069
dc.identifier.issued49
dc.identifier.journaltitleRSC Advances
dc.identifier.startpage34464
dc.identifier.urihttps://hdl.handle.net/10468/15357
dc.identifier.volume13
dc.language.isoenen
dc.publisherRoyal Society of Chemistry
dc.rights© 2023 The Author(s). Published by the Royal Society of Chemistry. This Open Access Article is licensed under a Creative Commons Attribution-Non Commercial 3.0 Unported Licence
dc.rights.urihttps://creativecommons.org/licenses/by-nc/3.0/
dc.subjectAlloy
dc.subjectTMD Alloys
dc.subject2D materials
dc.subjectMonolayer
dc.subjectSemiconductors
dc.titleSynthesis of component-controllable monolayer Mo x W (1− x ) S 2 y Se 2(1− y ) alloys with continuously tunable band gap and carrier type
dc.typeArticle (peer-reviewed)en
dc.typeArticleen
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