Synthesis of component-controllable monolayer Mo x W (1− x ) S 2 y Se 2(1− y ) alloys with continuously tunable band gap and carrier type
dc.contributor.author | Li, You | |
dc.contributor.author | Wang, Kangkang | |
dc.contributor.author | Wang, Yiwen | |
dc.contributor.author | Qian, Ziyue | |
dc.contributor.author | Huang, Wenbin | |
dc.contributor.author | Wang, Junqi | |
dc.contributor.author | Yang, Qichao | |
dc.contributor.author | Wang, Honggang | |
dc.contributor.author | Liao, Junyi | |
dc.contributor.author | Hussain, Sabir | |
dc.contributor.author | Xie,, Liming | |
dc.contributor.author | Qi, Junjie | |
dc.contributor.funder | Natural Science Foundation of Beijing Municipality | |
dc.contributor.funder | Beijing Municipal Natural Science Foundation | |
dc.contributor.funder | Fundamental Research Funds for the Central Universities | |
dc.date.accessioned | 2024-01-11T15:17:30Z | |
dc.date.available | 2024-01-03T14:11:53Z | en |
dc.date.available | 2024-01-11T15:17:30Z | |
dc.date.issued | 2023-11-24 | |
dc.date.updated | 2024-01-03T14:11:55Z | en |
dc.description.abstract | Alloying can effectively modify electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). However, efficient and simple methods to synthesize atomically thin TMD alloys need to be further developed. In this study, we synthesized 25 monolayer MoxW(1−x)S2ySe2(1−y) alloys by using a new liquid phase edge epitaxy (LPEE) growth method with high controllability. This straightforward approach can be used to obtain monolayer materials and operates on a self-limiting growth mechanism. The process allows the liquid solution to come into contact with the two-dimensional grains only at their edges, resulting in epitaxy confined only along the in-plane direction, which produces exclusively monolayer epitaxy. By controlling the weight ratio of MoS2/WSe2 (MoSe2/WS2), 25 monolayer MoxW(1−x)S2ySe2(1−y) alloys with different atomic ratios can be obtained on sapphire substrates, with band gap ranging from WS2 (1.55 eV) to MoSe2 (1.99 eV) and a continuously broad spectrum ranging from 623 nm to 800 nm. By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of MoxW(1−x)S2ySe2(1−y) alloys from n-type to bipolar type is achieved for the first time. This general synthetic strategy provides a foundation for the development of monolayer TMD alloys with multiple components and various 2D materials. | en |
dc.description.sponsorship | Beijing Natural Science Foundation (2202030); Beijing Municipal Science &Technology Commission; Fundamental Research Funds for Central Universities (FRF-GF-19-001A, FRF-GF-19-002B). | |
dc.description.status | Peer reviewed | en |
dc.description.version | Published Version | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Li, Y., Wang, K., Wang, Y., Qian, Z., Huang, W., Wang, J., Yang, Q., Wang, H., Liao, J., Hussain, S., Xie, L. and Qi, J. (2023) ‘Synthesis of component-controllable monolayer Mo x W (1− x ) S 2 y Se 2(1− y ) alloys with continuously tunable band gap and carrier type’, RSC Advances, 13(49), pp. 34464–34474. Available at: https://doi.org/10.1039/D3RA07065D | |
dc.identifier.doi | https://doi.org/10.1039/D3RA07065D | |
dc.identifier.endpage | 34474 | |
dc.identifier.issn | 2046-2069 | |
dc.identifier.issued | 49 | |
dc.identifier.journaltitle | RSC Advances | |
dc.identifier.startpage | 34464 | |
dc.identifier.uri | https://hdl.handle.net/10468/15357 | |
dc.identifier.volume | 13 | |
dc.language.iso | en | en |
dc.publisher | Royal Society of Chemistry | |
dc.rights | © 2023 The Author(s). Published by the Royal Society of Chemistry. This Open Access Article is licensed under a Creative Commons Attribution-Non Commercial 3.0 Unported Licence | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc/3.0/ | |
dc.subject | Alloy | |
dc.subject | TMD Alloys | |
dc.subject | 2D materials | |
dc.subject | Monolayer | |
dc.subject | Semiconductors | |
dc.title | Synthesis of component-controllable monolayer Mo x W (1− x ) S 2 y Se 2(1− y ) alloys with continuously tunable band gap and carrier type | |
dc.type | Article (peer-reviewed) | en |
dc.type | Article | en |