Propagation of nanopores and formation of nanoporous domains during anodization of n-InP in KOH

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dc.contributor.authorBuckley, D. Noel
dc.contributor.authorLynch, Robert P.
dc.contributor.authorQuill, Nathan
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderIrish Research Councilen
dc.contributor.funderFP7 People: Marie-Curie Actionsen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-07-16T10:51:49Z
dc.date.available2018-07-16T10:51:49Z
dc.date.issued2015-10
dc.date.updated2018-06-11T21:26:23Z
dc.description.abstractAnodization of highly doped (1018 cm-3) n-InP in 2 – 5 mol dm-3 KOH under potentiostatic or potentiodynamic conditions results in the formation of a nanoporous sub-surface region. Pores originate from surface pits and an individual, isolated porous domain is formed beneath each pit in the early stages of anodization. Each such domain is separated from the surface by a thin non-porous layer (typically ~40 nm) and is connected to the electrolyte by its pit. Pores emanate from these points along the <111>A crystallographic directions to form domains with the shape of a tetrahedron truncated symmetrically through its center by a plane parallel to the surface of the electrode. We propose a three-step model of electrochemical pore formation: (1) hole generation at pore tips, (2) hole diffusion and (3) electrochemical oxidation of the semiconductor to form etch products. Step 1 determines the overall etch rate. However, if the kinetics of Step 3 are slow relative to Step 2, then etching can occur at preferred crystallographic sites leading to pore propagation in preferential directions.en
dc.description.sponsorshipIrish Research Council (PhD scholarships); Science Foundation Ireland (SFI-funded National Access Programme (Project NAP No. 37 and 70));en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBuckley, D. N., Lynch, R. P., Quill, N. and O'Dwyer, C. (2015) 'Propagation of Nanopores and Formation of Nanoporous Domains during Anodization of n-InP in KOH', ECS Transactions, 69(14), pp. 17-32. doi: 10.1149/06914.0017ecsten
dc.identifier.doi10.1149/06914.0017ecst
dc.identifier.endpage32en
dc.identifier.issn1938-5862
dc.identifier.issued14en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage17en
dc.identifier.urihttps://hdl.handle.net/10468/6459
dc.identifier.volume69en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/229520/EU/IRCSET International Mobility Fellowships in Science Engineering and Technology: co-funded by Marie Curie Actions/INSPIREen
dc.relation.urihttp://ecst.ecsdl.org/content/69/14/17.abstract
dc.rights© 2015 ECS - The Electrochemical Societyen
dc.subjectNanoporesen
dc.subjectCrystallographic directionsen
dc.subjectCrystallographic sitesen
dc.subjectHole diffusionen
dc.subjectHole generationen
dc.subjectPore formationen
dc.subjectPotentiodynamic conditionsen
dc.subjectPotentiostaticsen
dc.subjectThree step modelsen
dc.subjectElectrochemical oxidationen
dc.subjectElectrolytesen
dc.titlePropagation of nanopores and formation of nanoporous domains during anodization of n-InP in KOHen
dc.typeArticle (peer-reviewed)en
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