InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications

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dc.contributor.authorRohr, Carsten
dc.contributor.authorAbbott, Paul
dc.contributor.authorBallard, Ian
dc.contributor.authorConnolly, James P.
dc.contributor.authorBarnham, Keith W. J.
dc.contributor.authorMazzer, Massimo
dc.contributor.authorButton, Chris
dc.contributor.authorNasi, Lucia
dc.contributor.authorHill, Geoff
dc.contributor.authorRoberts, John S.
dc.contributor.authorClarke, Graham
dc.contributor.authorGinige, Ravin
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-12T09:07:46Z
dc.date.available2017-07-12T09:07:46Z
dc.date.issued2006-12-08
dc.description.abstractQuantum well cells (QWCs) for thermophotovoltaic (TPV) applications are demonstrated in the InGaAsP material system lattice matched to the InP substrate and strain-compensated InGaAs/InGaAs QWCs also on InP substrates. We show that lattice-matched InGaAsP QWCs are very well suited for TPV applications such as with erbia selective emitters. QWCs with the same effective band gap as a bulk control cell show a better voltage performance in both wide and erbialike emission. We demonstrate a QWC with enhanced efficiency in a narrow-band spectrum compared to a bulk heterostructure control cell with the same absorption edge. A major advantage of QWCs is that the band gap can be engineered by changing the well thickness and varying the composition to the illuminating spectrum. This is relatively straightforward in the lattice-matched InGaAsP system. This approach can be extended to longer wavelengths by using strain-compensation techniques, achieving band gaps as low as 0.62 eV that cannot be achieved with lattice-matched bulk material. We show that strain-compensated QWCs have voltage performances that are at least as good as, if not better than, expected from bulk control cells.en
dc.description.sponsorshipUK Engineering and Physical Science Research Council (GR/L50471); European Commission (ERK6-CT-1999-00019).en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid114510
dc.identifier.citationRohr, C., Abbott, P., Ballard, I., Connolly, J. P., Barnham, K. W. J., Mazzer, M., Button, C., Nasi, L., Hill, G., Roberts, J. S., Clarke, G. and Ginige, R. (2006) 'InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications', Journal of Applied Physics, 100(11), pp. 114510. doi: 10.1063/1.2398466en
dc.identifier.doi10.1063/1.2398466
dc.identifier.endpage6
dc.identifier.issn0021-8979
dc.identifier.issued11
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4229
dc.identifier.volume100
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2398466
dc.rights© 2006 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Rohr, C., Abbott, P., Ballard, I., Connolly, J. P., Barnham, K. W. J., Mazzer, M., Button, C., Nasi, L., Hill, G., Roberts, J. S., Clarke, G. and Ginige, R. (2006) 'InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications', Journal of Applied Physics, 100(11), pp. 114510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2398466en
dc.subjectSolar-Cellsen
dc.subjectQuantum wellsen
dc.subjectBand gapen
dc.subjectIII-V semiconductorsen
dc.subjectDark currentsen
dc.subjectBulk materialsen
dc.titleInP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applicationsen
dc.typeArticle (peer-reviewed)en
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