Optical gain in GaAsBi/GaAs quantum well diode lasers

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dc.contributor.authorMarko, Igor P.
dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorJin, Shirong
dc.contributor.authorLudewig, Peter
dc.contributor.authorStolz, Wolfgang
dc.contributor.authorVolz, Kerstin
dc.contributor.authorRorison, Judy M.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorSweeney, Stephen J.
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.contributor.funderDeutsche Forschungsgemeinschaft
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-06-22T13:55:54Z
dc.date.available2017-06-22T13:55:54Z
dc.date.issued2016-07-01
dc.description.abstractElectrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly impact upon the device performance. Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. We determine internal optical losses of 10–15 cm−1 and a peak modal gain of 24 cm−1, corresponding to a material gain of approximately 1500 cm−1 at a current density of 2 kA cm−2. To complement the experimental studies, a theoretical analysis of the spontaneous emission and optical gain spectra is presented, using a model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The results of our theoretical calculations are in excellent quantitative agreement with the experimental data, and together provide a powerful predictive capability for use in the design and optimisation of high efficiency lasers in the infrared.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council, U.K. (project EP/H005587/01; EP/H050787/1; EP/K029665/1); German Science Foundation (project DFG: VO805/4; DFG: GRK1782); Science Foundation Ireland (project 10/IN.1/I2994).en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid28863
dc.identifier.citationMarko, I. P., Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O’Reilly, E. P. and Sweeney, S. J. (2016) 'Optical gain in GaAsBi/GaAs quantum well diode lasers', Scientific Reports, 6, 28863 (10pp). doi: 10.1038/srep28863en
dc.identifier.doi10.1038/srep28863
dc.identifier.endpage10
dc.identifier.issn2045-2322
dc.identifier.journaltitleScientific Reportsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4171
dc.identifier.volume6
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257974/EU/BIsmide And Nitride Components for High temperature Operation/BIANCHO
dc.relation.urihttps://www.nature.com/articles/srep28863
dc.rights© 2016, Marko et al. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectPhotonic devicesen
dc.subjectSemiconductor lasersen
dc.titleOptical gain in GaAsBi/GaAs quantum well diode lasersen
dc.typeArticle (peer-reviewed)en
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