Strategies for inorganic incorporation using neat block copolymer thin films for etch mask function and nanotechnological application

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dc.contributor.authorCummins, Cian
dc.contributor.authorGhoshal, Tandra
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMorris, Michael A.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSemiconductor Research Corporationen
dc.date.accessioned2018-09-14T13:29:24Z
dc.date.available2018-09-14T13:29:24Z
dc.date.issued2016-10
dc.date.updated2018-08-08T10:16:41Z
dc.description.abstractBlock copolymers (BCPs) and their directed self-assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self-assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal-salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di-BCP systems. Functionalities and newly reported uses for electronic and non-electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di-BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed.en
dc.description.sponsorshipSemiconductor Research Corporation (GRC Task 2444.001); Science Foundation Ireland (09/IN.1/602)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCummins, C., Ghoshal, T., Holmes, J. D. and Morris, M. A. (2016) 'Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application', Advanced Materials, 28(27), pp. 5586-5618. doi: 10.1002/adma.201503432en
dc.identifier.doi10.1002/adma.201503432
dc.identifier.endpage5618en
dc.identifier.issued27en
dc.identifier.journaltitleAdvanced Materialsen
dc.identifier.startpage5586en
dc.identifier.urihttps://hdl.handle.net/10468/6790
dc.identifier.volume28en
dc.language.isoenen
dc.publisherWileyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.urihttps://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201503432
dc.rights© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Cummins, C. , Ghoshal, T. , Holmes, J. D. and Morris, M. A. (2016), Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application. Adv. Mater., 28: 5586-561, which has been published in final form at https://doi.org/10.1002/adma.201503432. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.en
dc.subjectBlock copolymersen
dc.subjectThin filmsen
dc.subjectEtch contrasten
dc.subjectNanolithographyen
dc.subjectInorganic nanomaterialsen
dc.titleStrategies for inorganic incorporation using neat block copolymer thin films for etch mask function and nanotechnological applicationen
dc.typeArticle (peer-reviewed)en
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