Quantum confined intense red luminescence from large area monolithic arrays of mesoporous and nanocrystal-decorated silicon nanowires for luminescent devices

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dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorMcSweeney, William
dc.contributor.authorCollins, Gillian
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.date.accessioned2018-05-09T15:19:30Z
dc.date.available2018-05-09T15:19:30Z
dc.date.issued2015-09-01
dc.date.updated2018-05-03T07:44:34Z
dc.description.abstractWe report intense red luminescence from mesoporous n+-Si(100) nanowires (NWs) and nanocrystal-decorated p-Si NWs fabricated using electroless metal assisted chemical (MAC) etching. n+-Si NWs are composed of a labyrinthine network of silicon nanocrystals in a random mesoporous structure. p-type Si(100) NWs exhibit solid core structure, with a surface roughness that contains surface-bound nanocrystals. Both mesoporous n+-Si NWs and rough, solid p-Si NWs exhibit red luminescence at ∼1.7 and ∼1.8 eV, respectively. Time-resolved photoluminescence (PL) measurements indicated long (tens of μs) radiative recombination lifetimes. The red luminescence is visible with the naked eye and the red light is most intense from mesoporous n+-Si NWs, which exhibit a red-shift in the emission maximum to 1.76 eV at 100 K. The red PL from monolithic arrays of p-type NWs with nanocrystal-decorated rough surfaces is comparatively weak, but originates from the surface bound nanocrystals. Significant PL intensity increase is found during excitation for mesoporous NWs. X-ray photoelectron spectroscopy identifies a stoichiometric SiO2 on the rough p-Si NWs with a SiOx species at the NW surface. No distinct oxide is found on the mesoporous NWs. The analysis confirms that long life-time PL emission arises from quantum confinement from internal nanoscale crystallites, and oxidized surface-bound crystallites, on n+- and p-Si NWs respectively.en
dc.description.sponsorshipHigher Education Authority (INSPIRE programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–2013)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Dwyer, C., McSweeney, W. and Collins, G. (2016) 'Quantum Confined Intense Red Luminescence from Large Area Monolithic Arrays of Mesoporous and Nanocrystal-Decorated Silicon Nanowires for Luminescent Devices', ECS Journal of Solid State Science and Technology, 5(1), pp. R3059-R3066. doi: 10.1149/2.0081601jssen
dc.identifier.doi10.1149/2.0081601jss
dc.identifier.endpageR3066en
dc.identifier.issn2162-8769
dc.identifier.issued1en
dc.identifier.journaltitleECS Journal of Solid State Science and Technologyen
dc.identifier.startpageR3059en
dc.identifier.urihttps://hdl.handle.net/10468/6054
dc.identifier.volume5en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.urihttp://jss.ecsdl.org/content/5/1/R3059.abstract?cpetoc
dc.rights© The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.en
dc.subjectEtchingen
dc.subjectMicroscopyen
dc.subjectNanocrystalen
dc.subjectNanomaterialsen
dc.subjectNanowiresen
dc.subjectPhotoluminscenceen
dc.subjectPorousen
dc.subjectSiliconen
dc.titleQuantum confined intense red luminescence from large area monolithic arrays of mesoporous and nanocrystal-decorated silicon nanowires for luminescent devicesen
dc.typeArticle (peer-reviewed)en
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