Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

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dc.contributor.authorPiwonski, Tomasz
dc.contributor.authorPulka, J.
dc.contributor.authorMadden, Gillian
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorHoulihan, John
dc.contributor.authorPozo, J.
dc.contributor.authorVogiatzis, N.
dc.contributor.authorIvanov, P.
dc.contributor.authorRorison, J. M.
dc.contributor.authorBarrios, P. J.
dc.contributor.authorGupta, J. A.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderHigher Education Authority
dc.contributor.funderInstitutes of Technology, Ireland
dc.date.accessioned2017-07-12T09:07:43Z
dc.date.available2017-07-12T09:07:43Z
dc.date.issued2009-10-04
dc.description.abstractThe gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separation effects.en
dc.description.sponsorshipScience Foundation Ireland (under the Strategic Research Cluster PIFAS [07/SRC/I1173); Higher Education Authority (Irish Government's Programme for Research in Third Level Institutions); Irish Government (National Development Plan (2007-2013)); Institutes of Technology Ireland (funding under the Technological Sector Research Strand 1 programme)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid83104
dc.identifier.citationPiwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Pozo, J., Vogiatzis, N., Ivanov, P., Rorison, J. M., Barrios, P. J. and Gupta, J. A. (2009) 'Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers', Journal of Applied Physics, 106(8), pp. 083104. doi: 10.1063/1.3246781en
dc.identifier.doi10.1063/1.3246781
dc.identifier.endpage5
dc.identifier.issn0021-8979
dc.identifier.issued8
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4214
dc.identifier.volume106
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3246781
dc.rights© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Pozo, J., Vogiatzis, N., Ivanov, P., Rorison, J. M., Barrios, P. J. and Gupta, J. A. (2009) 'Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers', Journal of Applied Physics, 106(8), pp1-5. 083104. doi: 10.1063/1.3246781 and may be found at http://aip.scitation.org/doi/10.1063/1.3246781en
dc.subjectContinuous-wave operationen
dc.subjectLaser-diodesen
dc.subjectQuantum wellsen
dc.subject1.55-mu-men
dc.subjectGrowthen
dc.subjectGAASen
dc.subjectNMen
dc.subjectIII-V semiconductorsen
dc.subjectRefractive indexen
dc.subjectBlue shiften
dc.subjectCladdingen
dc.titleUltrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiersen
dc.typeArticle (peer-reviewed)en
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