Surface dynamics in III-V epitaxy and its device implications

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dc.check.date2025-12-31
dc.contributor.advisorPelucchi, Emanuele
dc.contributor.advisorJuska, Gediminas
dc.contributor.authorOzcan Atar, Ayseen
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2024-09-24T10:42:14Z
dc.date.available2024-09-24T10:42:14Z
dc.date.issued2024en
dc.date.submitted2024
dc.description.abstractMetalorganic vapour phase epitaxy (MOVPE) is a well-established, industry-compatible, compound semiconductor crystal growth technique, allowing for efficient and controllable material deposition. A wide range of semiconductor devices, both from III-V and nitrides families, are commonly fabricated for a broad range of applications in photonics, electronics and related fields, due to the reproducibility, scalability and overall excellent control over the growth process. Nevertheless, despite the technique’s popularity, there persists a large number of unresolved issues (mostly related to growth process/dynamic understanding) effectively hindering some of potential developments of III-V devices. A major unresolved technological issue, is the reported long range “leakage” of the dopant Zn into intrinsic layers during (and post) epitaxy, including the device processing steps. Zn is used as a typical p-type dopant for III-V materials and devices, but it is reportedly highly diffusive and historically very problematic. To bypass the Zn related problems, the large majority of InP based photonic devices, such as lasers and modulators, are fabricated with an n-i-p design, using p-type dopant at the top of the device. This approach essentially limits the design degree of freedom and stands in the way of the novel advanced stacked device architectures. This work reevaluated the Zn doping issues with unprecedented and surprising findings on Zn dopant behavior. The secondary ion mass spectrometry (SIMS) experiments show that Zn (or its precursors) can behave as a surfactant; accumulating on the sample surface during the growth of intentional doping layer and gradually incorporating into the nominally undoped layers even after the Zn source is shut off. Experimental findings are modelled by combining the surfactant and diffusion behavior with good qualitative agreement. Also, we demonstrated that this phenomenology can be suppressed and controlled either by introducing growth interruption steps or, even more effectively, introducing a competing surfactant species (Sb or its precursors). Our results highlight the relevance of (often overlooked) multi-faceted surface processes during MOVPE epitaxy, and help the implementation of robust solutions for novel device designs, crucially enabling next-generation integrated III-V applications.
dc.description.statusNot peer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationOzcan Atar, A. 2024. Surface dynamics in III-V epitaxy and its device implications. PhD Thesis, University College Cork.
dc.identifier.endpage101
dc.identifier.urihttps://hdl.handle.net/10468/16428
dc.language.isoenen
dc.publisherUniversity College Corken
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/EPSRC-SFI Centres for Doctoral Training (CDT) Partnership/18/EPSRC-CDT/3585/IE/EPSRC-SFI CDT in Photonic Integration and Advanced Data Storage/
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/
dc.rights© 2024, Ayse Ozcan Atar.
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0/
dc.subjectMOVPEen
dc.subjectSurfactanten
dc.subjectZn dopingen
dc.subjectSIMSen
dc.subjectIII-Ven
dc.titleSurface dynamics in III-V epitaxy and its device implications
dc.typeDoctoral thesisen
dc.type.qualificationlevelDoctoralen
dc.type.qualificationnamePhD - Doctor of Philosophyen
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