Low-resistance Ni-based Schottky diodes on freestanding n-GaN

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dc.contributor.authorLewis, Liam
dc.contributor.authorCorbett, Brian M.
dc.contributor.authorO'Mahony, Donagh
dc.contributor.authorMaaskant, Pleun P.
dc.date.accessioned2017-07-28T13:20:06Z
dc.date.available2017-07-28T13:20:06Z
dc.date.issued2007
dc.description.abstractSchottky diodes formed on a low doped (5 x 10(16) cm(-3)) n-type GaN epilayer grown on a n(+) freestanding GaN substrate were studied. The temperature dependent electrical characteristics of Ni contacts on the as-grown material are compared with an aqueous, potassium hydroxide (KOH) treated surface. In both cases the diodes are dominated by thermionic emission in forward bias, with low idealities (1.04 at room temperature) which decrease with increasing temperature, reaching 1.03 at 413 K. The Schottky barrier height is 0.79 +/- 0.05 eV for the as-grown surface compared with 0.85 +/- 0.05 eV for the KOH treated surface at room temperature. This is consistent with an inhomogeneous barrier distribution. The specific on-state resistance of the diodes is 0.57 m Omega cm(2) The KOH treatment reduces the room temperature reverse leakage current density at -30 V to 1 x 10(-5) A cm(-2) compared to 6 x 10(-2) A cm(-2) for the as-grown samples. (C) 2007 American Institute of Physics. (DOI:10.1063/1.2799739)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid162103
dc.identifier.citationLewis, L., Corbett, B., Mahony, D. O. and Maaskant, P. P. (2007) 'Low-resistance Ni-based Schottky diodes on freestanding n-GaN', Applied Physics Letters, 91(16), pp. 162103. doi: 10.1063/1.2799739en
dc.identifier.doi10.1063/1.2799739
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued16
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4376
dc.identifier.volume91
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2799739
dc.rights© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lewis, L., Corbett, B., Mahony, D. O. and Maaskant, P. P. (2007) 'Low-resistance Ni-based Schottky diodes on freestanding n-GaN', Applied Physics Letters, 91(16), pp. 162103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2799739en
dc.subjectRectifiersen
dc.subjectInterfacesen
dc.subjectTransporten
dc.subjectContactsen
dc.subjectSurfaceen
dc.subjectFilmsen
dc.subjectSchottky barriersen
dc.subjectSurface treatmentsen
dc.subjectDopingen
dc.subjectLeakage currentsen
dc.subjectElectrical resistivityen
dc.titleLow-resistance Ni-based Schottky diodes on freestanding n-GaNen
dc.typeArticle (peer-reviewed)en
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