Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector

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dc.contributor.authorSinnis, Vasileios S.
dc.contributor.authorSeto, M.
dc.contributor.author't Hooft, G. W.
dc.contributor.authorWatabe, Y.
dc.contributor.authorMorrison, Alan P.
dc.contributor.authorHoekstra, W.
dc.contributor.authorde Boer, W. B.
dc.date.accessioned2017-07-28T13:29:55Z
dc.date.available2017-07-28T13:29:55Z
dc.date.issued1999
dc.description.abstractWe report on a silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry-Perot oscillations. Resonant peaks and antiresonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 and 709 nm. The leakage current density is 85 pA/mm(2) at -5 V, and the average zero-bias capacitance is 12 pF/mm(2). We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response. (C) 1999 American Institute of Physics. (DOI: 10.1063/1.123499).en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSinnis, V. S., Seto, M., Hooft, G. W. t., Watabe, Y., Morrison, A. P., Hoekstra, W. and Boer, W. B. d. (1999) 'Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector', Applied Physics Letters, 74(9), pp. 1203-1205. doi: 10.1063/1.123499en
dc.identifier.doi10.1063/1.123499
dc.identifier.endpage1205
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1203
dc.identifier.urihttps://hdl.handle.net/10468/4410
dc.identifier.volume74
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.123499
dc.rights© 1999 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Sinnis, V. S., Seto, M., Hooft, G. W. t., Watabe, Y., Morrison, A. P., Hoekstra, W. and Boer, W. B. d. (1999) 'Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector', Applied Physics Letters, 74(9), pp. 1203-1205 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.123499en
dc.subjectHigh-speeden
dc.subjectWavelengthen
dc.subjectPhotodiodesen
dc.subjectSiliconen
dc.subjectPhysics demonstrationsen
dc.subjectDiffusionen
dc.subjectLeakage currentsen
dc.titleSilicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflectoren
dc.typeArticle (peer-reviewed)en
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