Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

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dc.contributor.authorKim, Hyunseoken
dc.contributor.authorLee, Wook-Jaeen
dc.contributor.authorFarrell, Alan C.en
dc.contributor.authorMorales, Juan S. D.en
dc.contributor.authorSenanayake, Pradeepen
dc.contributor.authorPrikhodko, Sergey V.en
dc.contributor.authorOchalski, Tomasz J.en
dc.contributor.authorHuffaker, Diana L.en
dc.contributor.funderLlywodraeth Cymruen
dc.contributor.funderAir Force Research Laboratoryen
dc.date.accessioned2023-09-13T14:05:33Z
dc.date.available2023-09-13T14:05:33Z
dc.date.issued2017-05-23en
dc.description.abstractChip-scale integrated light sources are a crucial component in a broad range of photonics applications. III–V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits. Here, we demonstrate for the first time optically pumped III–V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a prepatterned SOI platform. These results represent a new platform for ultracompact and energy-efficient optical links and unambiguously point the way toward practical and functional nanowire lasers.en
dc.description.sponsorshipAir Force Research Laboratory (FA9550-15-1-0324); Llywodraeth Cymru (Sêr Cymru Grants in Advanced Engineering and Materials)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKim, H., Lee, W. J., Farrell, A. C., Morales, J. S., Senanayake, P., Prikhodko, S. V., Ochalski, T. J. and Huffaker, D. L. (2017) 'Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature', Nano Letters, 17(6), pp. 3465-3470. doi: 10.1021/acs.nanolett.7b00384en
dc.identifier.doi10.1021/acs.nanolett.7b00384en
dc.identifier.eissn1530-6992en
dc.identifier.endpage3470en
dc.identifier.issn1530-6984en
dc.identifier.issued6en
dc.identifier.journaltitleNano Lettersen
dc.identifier.startpage3465en
dc.identifier.urihttps://hdl.handle.net/10468/14967
dc.identifier.volume17en
dc.language.isoenen
dc.publisherACS Publicationsen
dc.rights© 2017, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, 17(6), pp. 3465-3470, after technical editing by the publisher. To access the final edited and published work see: https://doi.org/10.1021/acs.nanolett.7b00384en
dc.subjectNanowire laseren
dc.subjectMonolithic integrationen
dc.subjectPhotonic crystalen
dc.subjectRoom temperatureen
dc.subjectInGaAsen
dc.subjectOptical linksen
dc.titleMonolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperatureen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue6en
oaire.citation.volume17en
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