An investigation by AFM and TEM of the mechanism of anodic formation of nanoporosity in n-InP in KOH

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dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBuckley, D. Noel
dc.contributor.authorSutton, David
dc.contributor.authorSerantoni, M.
dc.contributor.authorNewcomb, Simon B.
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderMaterials and Surface Science Institute (MSSI), University of Limericken
dc.date.accessioned2016-07-07T11:09:54Z
dc.date.available2016-07-07T11:09:54Z
dc.date.issued2006-12-14
dc.date.updated2012-11-29T18:15:30Z
dc.description.abstractThe early stages of nanoporous layer formation, under anodic conditions in the absence of light, were investigated for n-type InP with a carrier concentration of ∼3× 1018 cm-3 in 5 mol dm-3 KOH and a mechanism for the process is proposed. At potentials less than ∼0.35 V, spectroscopic ellipsometry and transmission electron microscopy (TEM) showed a thin oxide film on the surface. Atomic force microscopy (AFM) of electrode surfaces showed no pitting below ∼0.35 V but clearly showed etch pit formation in the range 0.4-0.53 V. The density of surface pits increased with time in both linear potential sweep and constant potential reaching a constant value at a time corresponding approximately to the current peak in linear sweep voltammograms and current-time curves at constant potential. TEM clearly showed individual nanoporous domains separated from the surface by a dense ∼40 nm InP layer. It is concluded that each domain develops as a result of directionally preferential pore propagation from an individual surface pit which forms a channel through this near-surface layer. As they grow larger, domains meet, and the merging of multiple domains eventually leads to a continuous nanoporous sub-surface region.en
dc.description.sponsorshipEnterprise Ireland; Higher Education Authority (HEA Programme for Research in Third Level Institutions PRTLI); Materials and Surface Science Institute (MSSI), University of Limericken
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Dwyer, C., Buckley, D. N., Sutton, D., Serantoni, M. and Newcomb, S. B. (2007) 'An investigation by AFM and TEM of the mechanism of anodic formation of nanoporosity in n-InP in KOH', Journal of the Electrochemical Society, 154(2), pp. H78-H85. http://jes.ecsdl.org/content/154/2/H78.abstracten
dc.identifier.doi10.1149/1.2401029
dc.identifier.endpageH85en
dc.identifier.issn0013-4651
dc.identifier.issued2en
dc.identifier.journaltitleJournal of the Electrochemical Societyen
dc.identifier.startpageH78en
dc.identifier.urihttps://hdl.handle.net/10468/2833
dc.identifier.volume154en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.rights© 2006 The Electrochemical Society. All rights reserved.en
dc.subjectIndium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectPorous semiconductorsen
dc.subjectNanoporous materialsen
dc.subjectPorosityen
dc.subjectElectrochemical electrodesen
dc.subjectAnodesen
dc.subjectAtomic force microscopyen
dc.subjectTransmission electron microscopyen
dc.subjectEllipsometryen
dc.subjectVoltammetry (chemical analysis)en
dc.subjectCarrier densityen
dc.subjectEtchingen
dc.subjectSurface structureen
dc.titleAn investigation by AFM and TEM of the mechanism of anodic formation of nanoporosity in n-InP in KOHen
dc.typeArticle (peer-reviewed)en
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