An investigation by AFM and TEM of the mechanism of anodic formation of nanoporosity in n-InP in KOH

dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBuckley, D. Noel
dc.contributor.authorSutton, David
dc.contributor.authorSerantoni, M.
dc.contributor.authorNewcomb, Simon B.
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderMaterials and Surface Science Institute (MSSI), University of Limericken
dc.date.accessioned2016-07-07T11:09:54Z
dc.date.available2016-07-07T11:09:54Z
dc.date.issued2006-12-14
dc.date.updated2012-11-29T18:15:30Z
dc.description.abstractThe early stages of nanoporous layer formation, under anodic conditions in the absence of light, were investigated for n-type InP with a carrier concentration of ∼3× 1018 cm-3 in 5 mol dm-3 KOH and a mechanism for the process is proposed. At potentials less than ∼0.35 V, spectroscopic ellipsometry and transmission electron microscopy (TEM) showed a thin oxide film on the surface. Atomic force microscopy (AFM) of electrode surfaces showed no pitting below ∼0.35 V but clearly showed etch pit formation in the range 0.4-0.53 V. The density of surface pits increased with time in both linear potential sweep and constant potential reaching a constant value at a time corresponding approximately to the current peak in linear sweep voltammograms and current-time curves at constant potential. TEM clearly showed individual nanoporous domains separated from the surface by a dense ∼40 nm InP layer. It is concluded that each domain develops as a result of directionally preferential pore propagation from an individual surface pit which forms a channel through this near-surface layer. As they grow larger, domains meet, and the merging of multiple domains eventually leads to a continuous nanoporous sub-surface region.en
dc.description.sponsorshipEnterprise Ireland; Higher Education Authority (HEA Programme for Research in Third Level Institutions PRTLI); Materials and Surface Science Institute (MSSI), University of Limericken
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Dwyer, C., Buckley, D. N., Sutton, D., Serantoni, M. and Newcomb, S. B. (2007) 'An investigation by AFM and TEM of the mechanism of anodic formation of nanoporosity in n-InP in KOH', Journal of the Electrochemical Society, 154(2), pp. H78-H85. http://jes.ecsdl.org/content/154/2/H78.abstracten
dc.identifier.doi10.1149/1.2401029
dc.identifier.endpageH85en
dc.identifier.issn0013-4651
dc.identifier.issued2en
dc.identifier.journaltitleJournal of the Electrochemical Societyen
dc.identifier.startpageH78en
dc.identifier.urihttps://hdl.handle.net/10468/2833
dc.identifier.volume154en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.rights© 2006 The Electrochemical Society. All rights reserved.en
dc.subjectIndium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectPorous semiconductorsen
dc.subjectNanoporous materialsen
dc.subjectPorosityen
dc.subjectElectrochemical electrodesen
dc.subjectAnodesen
dc.subjectAtomic force microscopyen
dc.subjectTransmission electron microscopyen
dc.subjectEllipsometryen
dc.subjectVoltammetry (chemical analysis)en
dc.subjectCarrier densityen
dc.subjectEtchingen
dc.subjectSurface structureen
dc.subject~Chemistry - Journal Articles~en
dc.titleAn investigation by AFM and TEM of the mechanism of anodic formation of nanoporosity in n-InP in KOHen
dc.typeArticle (peer-reviewed)en
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