Towards electrochemical fabrication of free-standing indium phosphide nanofilms

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dc.contributor.authorQuill, Nathan
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBuckley, D. Noel
dc.contributor.authorLynch, Robert P.
dc.contributor.funderIrish Research Councilen
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-08-31T09:28:38Z
dc.date.available2018-08-31T09:28:38Z
dc.date.issued2015-10
dc.date.updated2018-05-16T00:24:54Z
dc.description.abstractThe formation of sub-surface truncated tetrahedral voids beneath suspended ~40 nm thick dense InP shelves is achievable via a two-step etching method. The first step involves the electrochemical anodisation of n-type InP in aqueous KOH electrolyte resulting in the formation of truncated tetrahedral domains of pores beneath an ~40 nm thick dense surface layer with an individual pit that penetrates the dense surface layer of each domain. The second step involves the preferential chemical etching of these porous domains with only limited etching of the surrounding bulk InP and dense surface layer. The resulting structure of each domain is a truncated tetrahedral void with a dense InP layer suspended above it. This new technique may be a very useful tool in the fabrication of devices based on III-V semiconductors and it may be possible to extend the technique to the fabrication of free-standing InP nanofilms.en
dc.description.sponsorshipIrish Research Council (IRC PhD scholarships); Higher Education Authority (Tyndall National Institute through National Access Programme Funding)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationQuill, N., O'Dwyer, C., Buckley, D. N. & Lynch, R. P. (2015) 'Towards Electrochemical Fabrication of Free-Standing Indium Phosphide Nanofilms'. ECS Transactions, 69 (14):33-48. doi: 10.1149/06914.0033ecsten
dc.identifier.doi10.1149/06914.0033ecst
dc.identifier.endpage48en
dc.identifier.issn1938-5862
dc.identifier.issued14en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage33en
dc.identifier.urihttps://hdl.handle.net/10468/6694
dc.identifier.volume69en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/229520/EU/IRCSET International Mobility Fellowships in Science Engineering and Technology: co-funded by Marie Curie Actions/INSPIREen
dc.relation.urihttp://ecst.ecsdl.org/content/69/14/33.full.pdf+html
dc.rights© 2015 ECS - The Electrochemical Societyen
dc.subjectFabricationen
dc.subjectElectrolytesen
dc.subjectEtchingen
dc.subjectAnodisationen
dc.subjectChemical etchingen
dc.subjectDense surface layeren
dc.subjectElectrochemical fabricationen
dc.subjectII-IV semiconductorsen
dc.subjectPorous domainen
dc.subjectSub-surfacesen
dc.subjectTwo-step etching methoden
dc.titleTowards electrochemical fabrication of free-standing indium phosphide nanofilmsen
dc.typeArticle (peer-reviewed)en
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